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Tunable metal-insulator transition in double-layer graphene heterostructures

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Tunable metal-insulator transition in double-layer graphene heterostructures. / Ponomarenko, L. A.; Geim, A. K.; Zhukov, A. A.; Jalil, R.; Morozov, S. V.; Novoselov, K. S.; Grigorieva, I. V.; Hill, E. H.; Cheianov, V. V.; Falko, V.; Watanabe, K.; Taniguchi, T.; Gorbachev, R. V.

In: Nature physics, Vol. 7, No. 12, 09.10.2011, p. 958-961.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Ponomarenko, LA, Geim, AK, Zhukov, AA, Jalil, R, Morozov, SV, Novoselov, KS, Grigorieva, IV, Hill, EH, Cheianov, VV, Falko, V, Watanabe, K, Taniguchi, T & Gorbachev, RV 2011, 'Tunable metal-insulator transition in double-layer graphene heterostructures', Nature physics, vol. 7, no. 12, pp. 958-961. https://doi.org/10.1038/nphys2114

APA

Ponomarenko, L. A., Geim, A. K., Zhukov, A. A., Jalil, R., Morozov, S. V., Novoselov, K. S., Grigorieva, I. V., Hill, E. H., Cheianov, V. V., Falko, V., Watanabe, K., Taniguchi, T., & Gorbachev, R. V. (2011). Tunable metal-insulator transition in double-layer graphene heterostructures. Nature physics, 7(12), 958-961. https://doi.org/10.1038/nphys2114

Vancouver

Ponomarenko LA, Geim AK, Zhukov AA, Jalil R, Morozov SV, Novoselov KS et al. Tunable metal-insulator transition in double-layer graphene heterostructures. Nature physics. 2011 Oct 9;7(12):958-961. https://doi.org/10.1038/nphys2114

Author

Ponomarenko, L. A. ; Geim, A. K. ; Zhukov, A. A. ; Jalil, R. ; Morozov, S. V. ; Novoselov, K. S. ; Grigorieva, I. V. ; Hill, E. H. ; Cheianov, V. V. ; Falko, V. ; Watanabe, K. ; Taniguchi, T. ; Gorbachev, R. V. / Tunable metal-insulator transition in double-layer graphene heterostructures. In: Nature physics. 2011 ; Vol. 7, No. 12. pp. 958-961.

Bibtex

@article{cebe274277c8415a8e0d67ccdf0066fc,
title = "Tunable metal-insulator transition in double-layer graphene heterostructures",
abstract = "Disordered conductors with resistivity above the resistance quantum h/e(2) should exhibit an insulating behaviour at low temperatures, a universal phenomenon known as a strong (Anderson) localization(1-3). Observed in a multitude of materials, including damaged graphene and its disordered chemical derivatives(4-10), Anderson localization has not been seen in generic graphene, despite its resistivity near the neutrality point reaching approximate to h/e(2) per carrier type(4,5). It has remained a puzzle why graphene is such an exception. Here we report a strong localization and the corresponding metal-insulator transition in ultra-high-quality graphene. The transition is controlled externally, by changing the carrier density in another graphene layer placed at a distance of several nm and decoupled electrically. The entire behaviour is explained by electron-hole puddles that disallow localization in standard devices but can be screened out in double-layer graphene. The localization that occurs with decreasing rather than increasing disorder is a unique occurrence, and the reported double-layer heterostructures presents a new experimental system that invites further studies.",
keywords = "Electronics, photonics and device physics , Condensed-matter physics , Nanotechnology",
author = "Ponomarenko, {L. A.} and Geim, {A. K.} and Zhukov, {A. A.} and R. Jalil and Morozov, {S. V.} and Novoselov, {K. S.} and Grigorieva, {I. V.} and Hill, {E. H.} and Cheianov, {V. V.} and V. Falko and K. Watanabe and T. Taniguchi and Gorbachev, {R. V.}",
year = "2011",
month = oct,
day = "9",
doi = "10.1038/nphys2114",
language = "English",
volume = "7",
pages = "958--961",
journal = "Nature physics",
issn = "1745-2473",
publisher = "Nature Publishing Group",
number = "12",

}

RIS

TY - JOUR

T1 - Tunable metal-insulator transition in double-layer graphene heterostructures

AU - Ponomarenko, L. A.

AU - Geim, A. K.

AU - Zhukov, A. A.

AU - Jalil, R.

AU - Morozov, S. V.

AU - Novoselov, K. S.

AU - Grigorieva, I. V.

AU - Hill, E. H.

AU - Cheianov, V. V.

AU - Falko, V.

AU - Watanabe, K.

AU - Taniguchi, T.

AU - Gorbachev, R. V.

PY - 2011/10/9

Y1 - 2011/10/9

N2 - Disordered conductors with resistivity above the resistance quantum h/e(2) should exhibit an insulating behaviour at low temperatures, a universal phenomenon known as a strong (Anderson) localization(1-3). Observed in a multitude of materials, including damaged graphene and its disordered chemical derivatives(4-10), Anderson localization has not been seen in generic graphene, despite its resistivity near the neutrality point reaching approximate to h/e(2) per carrier type(4,5). It has remained a puzzle why graphene is such an exception. Here we report a strong localization and the corresponding metal-insulator transition in ultra-high-quality graphene. The transition is controlled externally, by changing the carrier density in another graphene layer placed at a distance of several nm and decoupled electrically. The entire behaviour is explained by electron-hole puddles that disallow localization in standard devices but can be screened out in double-layer graphene. The localization that occurs with decreasing rather than increasing disorder is a unique occurrence, and the reported double-layer heterostructures presents a new experimental system that invites further studies.

AB - Disordered conductors with resistivity above the resistance quantum h/e(2) should exhibit an insulating behaviour at low temperatures, a universal phenomenon known as a strong (Anderson) localization(1-3). Observed in a multitude of materials, including damaged graphene and its disordered chemical derivatives(4-10), Anderson localization has not been seen in generic graphene, despite its resistivity near the neutrality point reaching approximate to h/e(2) per carrier type(4,5). It has remained a puzzle why graphene is such an exception. Here we report a strong localization and the corresponding metal-insulator transition in ultra-high-quality graphene. The transition is controlled externally, by changing the carrier density in another graphene layer placed at a distance of several nm and decoupled electrically. The entire behaviour is explained by electron-hole puddles that disallow localization in standard devices but can be screened out in double-layer graphene. The localization that occurs with decreasing rather than increasing disorder is a unique occurrence, and the reported double-layer heterostructures presents a new experimental system that invites further studies.

KW - Electronics, photonics and device physics

KW - Condensed-matter physics

KW - Nanotechnology

UR - http://www.scopus.com/inward/record.url?scp=80053537848&partnerID=8YFLogxK

U2 - 10.1038/nphys2114

DO - 10.1038/nphys2114

M3 - Journal article

VL - 7

SP - 958

EP - 961

JO - Nature physics

JF - Nature physics

SN - 1745-2473

IS - 12

ER -