Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 25/01/1996 |
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<mark>Journal</mark> | JETP Letters |
Issue number | 2 |
Volume | 63 |
Number of pages | 6 |
Pages (from-to) | 133-138 |
Publication Status | Published |
<mark>Original language</mark> | English |
The kinetics of recombination of electrons and acceptor-bound holes in AlGaAs-GaAs heterostructure obey a single-exponential decay in the liquid phase of 2D electrons, whereas localization gives rise to a broad spectrum of recombination rates, especially in the magnetic freeze-out regime, This results in a power-law dependence I(t)(proportional to)(tau/t)(alpha) in the tail of the recombination kinetics, with the universal exponent alpha=(1 - nu)(-1) at nu<1 for all the samples examined experimentally in this work. (C) 1996 American Institute of Physics.