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Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics

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Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics. / Vazquez-Fernandez, Isabel ; Mariotti, Silvia ; Hutter, Oliver S. et al.
In: Chemistry of Materials, Vol. 32, No. 15, 11.08.2020, p. 6676-6684.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Vazquez-Fernandez, I, Mariotti, S, Hutter, OS, Birkett, M, Veal, TD, Hobson, TDC, Phillips, LJ, Danos, L, Nayak, PK, Snaith, HJ, Xie, W, Sherburne, MP, Asta, M & Durose, K 2020, 'Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics', Chemistry of Materials, vol. 32, no. 15, pp. 6676-6684. https://doi.org/10.1021/acs.chemmater.0c02150

APA

Vazquez-Fernandez, I., Mariotti, S., Hutter, O. S., Birkett, M., Veal, T. D., Hobson, T. D. C., Phillips, L. J., Danos, L., Nayak, P. K., Snaith, H. J., Xie, W., Sherburne, M. P., Asta, M., & Durose, K. (2020). Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics. Chemistry of Materials, 32(15), 6676-6684. https://doi.org/10.1021/acs.chemmater.0c02150

Vancouver

Vazquez-Fernandez I, Mariotti S, Hutter OS, Birkett M, Veal TD, Hobson TDC et al. Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics. Chemistry of Materials. 2020 Aug 11;32(15):6676-6684. Epub 2020 Jul 9. doi: 10.1021/acs.chemmater.0c02150

Author

Vazquez-Fernandez, Isabel ; Mariotti, Silvia ; Hutter, Oliver S. et al. / Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics. In: Chemistry of Materials. 2020 ; Vol. 32, No. 15. pp. 6676-6684.

Bibtex

@article{3dbd2287dd954ce7b465e0fc7a16fa20,
title = "Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics",
abstract = "Alternatives to lead- and tin-based perovskites for photovoltaics and optoelectronics are sought that do not suffer from the disadvantages of toxicity and low device efficiency of present-day materials. Here we report a study of the double perovskite Cs2TeI6, which we have synthesized in thin film form for the first time. Exhaustive trials concluded that spin coating CsI and TeI4 using an anti-solvent method produced uniform films, confirmed as Cs2TeI6 by XRD with Rietveld analysis. They were stable up to 250°C, had an optical band gap of ~1.5 eV, absorption coefficients of ~6 x 104 cm-1, carrier lifetimes of ~2.6 ns (unpassivated 200 nm film), a work function of 4.95 eV and had p-type surface conductivity. Vibrational modes probed by Raman and FTIR spectroscopy showed resonances qualitatively consistent with DFT Phonopy-calculated spectra, offering another route for phase confirmation. It was concluded that the material is a candidate for further study as a potential optoelectronic or photovoltaic material.",
author = "Isabel Vazquez-Fernandez and Silvia Mariotti and Hutter, {Oliver S.} and Max Birkett and Veal, {Tim D.} and Hobson, {Theodore D. C} and Phillips, {Laurie J.} and Lefteris Danos and Nayak, {Pabitra K.} and Snaith, {Henry J.} and Wei Xie and Sherburne, {Matthew P.} and Mark Asta and Ken Durose",
year = "2020",
month = aug,
day = "11",
doi = "10.1021/acs.chemmater.0c02150",
language = "English",
volume = "32",
pages = "6676--6684",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "AMER CHEMICAL SOC",
number = "15",

}

RIS

TY - JOUR

T1 - Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics

AU - Vazquez-Fernandez, Isabel

AU - Mariotti, Silvia

AU - Hutter, Oliver S.

AU - Birkett, Max

AU - Veal, Tim D.

AU - Hobson, Theodore D. C

AU - Phillips, Laurie J.

AU - Danos, Lefteris

AU - Nayak, Pabitra K.

AU - Snaith, Henry J.

AU - Xie, Wei

AU - Sherburne, Matthew P.

AU - Asta, Mark

AU - Durose, Ken

PY - 2020/8/11

Y1 - 2020/8/11

N2 - Alternatives to lead- and tin-based perovskites for photovoltaics and optoelectronics are sought that do not suffer from the disadvantages of toxicity and low device efficiency of present-day materials. Here we report a study of the double perovskite Cs2TeI6, which we have synthesized in thin film form for the first time. Exhaustive trials concluded that spin coating CsI and TeI4 using an anti-solvent method produced uniform films, confirmed as Cs2TeI6 by XRD with Rietveld analysis. They were stable up to 250°C, had an optical band gap of ~1.5 eV, absorption coefficients of ~6 x 104 cm-1, carrier lifetimes of ~2.6 ns (unpassivated 200 nm film), a work function of 4.95 eV and had p-type surface conductivity. Vibrational modes probed by Raman and FTIR spectroscopy showed resonances qualitatively consistent with DFT Phonopy-calculated spectra, offering another route for phase confirmation. It was concluded that the material is a candidate for further study as a potential optoelectronic or photovoltaic material.

AB - Alternatives to lead- and tin-based perovskites for photovoltaics and optoelectronics are sought that do not suffer from the disadvantages of toxicity and low device efficiency of present-day materials. Here we report a study of the double perovskite Cs2TeI6, which we have synthesized in thin film form for the first time. Exhaustive trials concluded that spin coating CsI and TeI4 using an anti-solvent method produced uniform films, confirmed as Cs2TeI6 by XRD with Rietveld analysis. They were stable up to 250°C, had an optical band gap of ~1.5 eV, absorption coefficients of ~6 x 104 cm-1, carrier lifetimes of ~2.6 ns (unpassivated 200 nm film), a work function of 4.95 eV and had p-type surface conductivity. Vibrational modes probed by Raman and FTIR spectroscopy showed resonances qualitatively consistent with DFT Phonopy-calculated spectra, offering another route for phase confirmation. It was concluded that the material is a candidate for further study as a potential optoelectronic or photovoltaic material.

U2 - 10.1021/acs.chemmater.0c02150

DO - 10.1021/acs.chemmater.0c02150

M3 - Journal article

VL - 32

SP - 6676

EP - 6684

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 15

ER -