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Vacancy-Ordered Double Perovskite Cs2TeI6 Thin Films for Optoelectronics

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  • Isabel Vazquez-Fernandez
  • Silvia Mariotti
  • Oliver S. Hutter
  • Max Birkett
  • Tim D. Veal
  • Theodore D. C Hobson
  • Laurie J. Phillips
  • Lefteris Danos
  • Pabitra K. Nayak
  • Henry J. Snaith
  • Wei Xie
  • Matthew P. Sherburne
  • Mark Asta
  • Ken Durose
<mark>Journal publication date</mark>11/08/2020
<mark>Journal</mark>Chemistry of Materials
Issue number15
Number of pages9
Pages (from-to)6676-6684
Publication StatusPublished
Early online date9/07/20
<mark>Original language</mark>English


Alternatives to lead- and tin-based perovskites for photovoltaics and optoelectronics are sought that do not suffer from the disadvantages of toxicity and low device efficiency of present-day materials. Here we report a study of the double perovskite Cs2TeI6, which we have synthesized in thin film form for the first time. Exhaustive trials concluded that spin coating CsI and TeI4 using an anti-solvent method produced uniform films, confirmed as Cs2TeI6 by XRD with Rietveld analysis. They were stable up to 250°C, had an optical band gap of ~1.5 eV, absorption coefficients of ~6 x 104 cm-1, carrier lifetimes of ~2.6 ns (unpassivated 200 nm film), a work function of 4.95 eV and had p-type surface conductivity. Vibrational modes probed by Raman and FTIR spectroscopy showed resonances qualitatively consistent with DFT Phonopy-calculated spectra, offering another route for phase confirmation. It was concluded that the material is a candidate for further study as a potential optoelectronic or photovoltaic material.