Results for Interface misfit epitaxy

Publications & Outputs

GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface
Marshall, A., Craig, A., Reyner, C. J. & Huffaker, D. L., 05/2015, In: Infrared Physics and Technology. 70, p. 168-170 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"
Craig, A., Marshall, A. R. J., Tian, Z.-B. & Krishna, S., 05/2015, In: Infrared Physics and Technology. 70, p. 107-110 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb
Craig, A., Marshall, A., Tian, Z.-B. & Krishna, S., 11/2014, In: Infrared Physics and Technology. 67, p. 210-213 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review