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Results for Interface misfit epitaxy

Publications & Outputs

  1. GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface

    Marshall, A., Craig, A., Reyner, C. J. & Huffaker, D. L., 05/2015, In: Infrared Physics and Technology. 70, p. 168-170 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Reprint of "mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers - Grown on GaAs, using an interfacial misfit array, and on native GaSb"

    Craig, A., Marshall, A. R. J., Tian, Z-B. & Krishna, S., 05/2015, In: Infrared Physics and Technology. 70, p. 107-110 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers – Grown on GaAs, using an interfacial misfit array, and on native GaSb

    Craig, A., Marshall, A., Tian, Z-B. & Krishna, S., 11/2014, In: Infrared Physics and Technology. 67, p. 210-213 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review