My research is focused on novel materials and structures for next generation electronic devices, including photodetectors, solar cells and thermo photovoltaics. Currently I am developing the mismatched growth of GaSb and InAs based materials with atomically abrupt interfaces on GaAs and Silicon substrates, including studying the properties of the novel hetero-lattice interfaces formed and exciting new devices exploiting this technology in collaboration with my industrial partners. I am also developing the micro and nanoscale fabrication of novel devices using the new state of the art facilities within the Lancaster Quantum Technology Centre.
During my early career I worked in the large multi-national companies, Ford and Visteon. As a result I intimately understand the requirements of companies right from business planning, through design into manufacturing. This helps me relate my research to industry and work with my industrial partners. After leading the development team on a $100million program I returned to academia to undertake a PhD and briefly work as a contracted research fellow. In 2010 I won a prestigious 5 year Royal Academy of Engineering / EPSRC Research Fellowship and moved my research to the Physics department at Lancaster University.
Royal Academy of Engineering / EPSRC research fellowship – Exploiting Emerging Interface Misfit Epitaxy
EPSRC - InAsNSb Dilute Nitride Materials for Mid-infrared Devices and Applications
I collaborate with a range of companies and am always interested to expand this where I am able to offer an advantage to an industrial partner.
Following my time in industry I am a chartered engineer
Reviewer for various IEEE and AIP journals.
Second year laboratories and 4th year MPhys projects.
