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ULTRARAM™: towards the development of a III-V semiconductor, non-volatile, random-access memory
Lane, D. (Creator), Hayne, M. (Creator), Hodgson, P. (Creator), Lancaster University, 2021, 10.17635/lancaster/researchdata/420
Dataset
Simulations of resonant tunneling through InAs/AlSb heterostructures for ULTRARAM™ memory
Lane, D. (Creator), Hayne, M. (Creator), Lancaster University, 2021, 10.17635/lancaster/researchdata/467
Dataset
Dataset for ULTRARAM: a low-energy, high-endurance, compound-semiconductor memory on silicon
Hodgson, P. (Creator), Lane, D. (Creator), Carrington, P. (Creator), Delli, E. (Creator), Beanland, R. (Creator), Hayne, M. (Creator), Lancaster University, 24/11/2021, 10.17635/lancaster/researchdata/496
Dataset