Projects (5)

1. ULTRARAM - Neuromorphic memory for AI applications

   Hayne, M. (Principal Investigator) & Hodgson, P. (Co-Investigator)

   1/09/25 → 28/02/26

   Project: Research

2. Industrial Epitaxy of ULTRARAM Computer Memory

   Hayne, M. (Principal Investigator)

   1/06/24 → 31/05/25

   Project: Research

3. IAA Huawei: ULTRARAM Arrays

   Hayne, M. (Principal Investigator)

   1/09/19 → 30/09/20

   Project: Research

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Researchers (2)

1. Professor Manus Hayne

   • Physics - Professor

   Affiliations

   • Quantum Technology Centre
   • Energy Lancaster
   • Quantum Nanotechnology

2. Jonathan Hall

   • Quantum Nanotechnology - Research student

Publications & Outputs (6)

1. Published

   Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory

   Lane, D. & Hayne, M., 22/06/2021, In: Journal of Physics D: Applied Physics. 54, 35, 7 p., 335104.

   Research output: Contribution to Journal/Magazine › Journal article › peer-review

2. Published

   ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

   Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

   Research output: Contribution to Journal/Magazine › Journal article › peer-review

3. Published

   ULTRARAM: toward the development of a III-V semiconductor, non-volatile, random-access memory

   Lane, D., Hodgson, P., Potter, R., Beanland, R. & Hayne, M., 31/05/2021, In: IEEE Transactions on Electron Devices. 68, 5, p. 2271-2274 4 p.

   Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Datasets (3)

1. ULTRARAM™: towards the development of a III-V semiconductor, non-volatile, random-access memory

   Lane, D. (Creator), Hayne, M. (Creator) & Hodgson, P. (Creator), Lancaster University, 2021

   Text available via DOI: https://doi.org/10.17635/lancaster/researchdata/420

   Dataset

2. Simulations of resonant tunneling through InAs/AlSb heterostructures for ULTRARAM™ memory

   Lane, D. (Creator) & Hayne, M. (Creator), Lancaster University, 2021

   Text available via DOI: https://doi.org/10.17635/lancaster/researchdata/467

   Dataset

3. Dataset for ULTRARAM: a low-energy, high-endurance, compound-semiconductor memory on silicon

   Hodgson, P. (Creator), Lane, D. (Creator), Carrington, P. (Creator), Delli, E. (Creator), Beanland, R. (Creator) & Hayne, M. (Creator), Lancaster University, 24/11/2021

   Text available via DOI: https://doi.org/10.17635/lancaster/researchdata/496

   Dataset