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Publications & Outputs (6)

  1. Published

    Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory

    Lane, D. & Hayne, M., 22/06/2021, In: Journal of Physics D: Applied Physics. 54, 35, 7 p., 335104.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

    Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    ULTRARAM: toward the development of a III-V semiconductor, non-volatile, random-access memory

    Lane, D., Hodgson, P., Potter, R., Beanland, R. & Hayne, M., 31/05/2021, In: IEEE Transactions on Electron Devices. 68, 5, p. 2271-2274 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Researchers (2)

  1. Professor Manus Hayne

  2. Jonathan Hall

Projects (4)

  1. Industrial Epitaxy of ULTRARAM Computer Memory

    Hayne, M. (Principal Investigator)

    1/06/24 → 31/05/25

    Project: Research

  2. IAA Huawei: ULTRARAM Arrays

    Hayne, M. (Principal Investigator)

    1/09/19 → 30/09/20

    Project: Research

  3. MSI: Ultralow-power, Non-volatile, Random Access Memory Arrays for Data centers and Space Applications (ULTRARAM)

    Hayne, M. (Principal Investigator)

    European Commission

    1/05/22 → 30/06/24

    Project: Research

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Datasets (3)

  1. ULTRARAM™: towards the development of a III-V semiconductor, non-volatile, random-access memory

    Lane, D. (Creator), Hayne, M. (Creator) & Hodgson, P. (Creator), Lancaster University, 2021

    Text available via DOI: https://doi.org/10.17635/lancaster/researchdata/420

    Dataset

  2. Simulations of resonant tunneling through InAs/AlSb heterostructures for ULTRARAM™ memory

    Lane, D. (Creator) & Hayne, M. (Creator), Lancaster University, 2021

    Text available via DOI: https://doi.org/10.17635/lancaster/researchdata/467

    Dataset

  3. Dataset for ULTRARAM: a low-energy, high-endurance, compound-semiconductor memory on silicon

    Hodgson, P. (Creator), Lane, D. (Creator), Carrington, P. (Creator), Delli, E. (Creator), Beanland, R. (Creator) & Hayne, M. (Creator), Lancaster University, 24/11/2021

    Text available via DOI: https://doi.org/10.17635/lancaster/researchdata/496

    Dataset