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Quantum Nanotechnology

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  1. 2008
  2. Published

    Systems and methods for monitoring solids using mechanical resonator

    Burdett, I., Lynn, T., Kolosov, O., Zilker, D. P. & Matsiev, L., 2/07/2008, IPC No. G01N 29/02, Patent No. China Patent CN 200680023230

    Research output: Patent

  3. Published

    Excitonic Mott transition in type-II quantum dots.

    Bansal, B., Hayne, M., Geller, M., Bimberg, D. & Moshchalkov, V., 13/06/2008, In: Physical review B. 77, 4 p., 241304(R).

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Photoluminescence in InAsN epilayers grown by molecular beam epitaxy

    Zhuang, Q., Godenir, A. & Krier, A., 10/06/2008, In: Journal of Physics D: Applied Physics. 41, 13, p. 132002

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Room temperature photoluminescence at 4.5 mu m from InAsN

    Zhuang, Q., Godenir, A. M. R., Krier, A., Lai, K. T. & Haywood, S. K., 26/03/2008, In: Journal of Applied Physics. 103, 6, p. 063520

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots in pulsed magnetic fields.

    Nuytten, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 25/03/2008, In: Physical review B. 77, p. 115348

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Classification and control of the origin of photoluminescence from Si nanocrystals.

    Godefroo, S., Hayne, M., Jivanescu, M., Stesmans, A., Zacharias, M., Lededev, O., Van Tendeloo, G. & Moshchalkov, V. V., 2/03/2008, In: Nature Nanotechnology. 3, 3, p. 174-178 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb-2 and As-2 fluxes

    Carrington, P., Solov'ev, V. A., Zhuang, Q., Ivanov, S. V. & Krier, A., 1/02/2008, In: Proceedings of SPIE. 6900, 69000I.

    Research output: Contribution to Journal/Magazine › Journal article

  9. Published

    Electronic transport in single molecule junctions: control of the molecule-electrode coupling through intramolecular tunneling barriers

    Danilov, A., Kubatkin, S., Kafanov, S., Hedegård, P., Stuhr-Hansen, N., Moth-Poulsen, K. & Bjørnholm, T., 01/2008, In: Nano Letters. 8, 1, p. 1-5 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    The development of room temperature LEDs and lasers for the mid-infrared spectral range.

    Krier, A., Yin, M., Smirnov, V., Batty, P. J., Carrington, P., Solovev, V. & Sherstnev, V., 01/2008, In: physica status solidi (a). 205, 1, p. 129-143 15 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

    Yin, M., Krier, A., Carrington, P. J., Jones, R. & Krier, S. E., 2008, NARROW GAP SEMICONDUCTORS 2007. Murdin, BN. & Clowes, S. (eds.). DORDRECHT: Springer, p. 69-72 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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