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Room temperature photoluminescence at 4.5 mu m from InAsN

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<mark>Journal publication date</mark>26/03/2008
<mark>Journal</mark>Journal of Applied Physics
Issue number6
Pages (from-to)063520
Publication StatusPublished
<mark>Original language</mark>English


Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy was investigated as a function of growth conditions. Reduced growth rate, growth temperature, and arsenic flux significantly enhance the nitrogen incorporation. Optimal growth conditions allowed us to obtain high quality InAsN with nitrogen composition of up to 2.5%. The epilayers exhibit intense 4 K photoluminescence (PL) with double-peak features, which were attributed to free carrier recombination and localized carrier recombination. Strong room temperature PL emission up to a wavelength of 4.5 µm is obtained. ©2008 American Institute of Physics

Bibliographic note

Article number: 063520