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Dr Andrew Marshall

Senior Lecturer

  1. 2011
  2. Published

    Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

    Ker, P. J., Marshall, A. R. J., Krysa, A. B., David, J. P. R. & Tan, C. H., 08/2011, In: IEEE Journal of Quantum Electronics. 47, 8, p. 1123-1128 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

    Marshall, A. R. J., Vines, P., Ker, P. J., David, J. P. R. & Tan, C. H., 06/2011, In: IEEE Journal of Quantum Electronics. 47, 6, p. 858-864 7 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    The InAs electron avalanche photodiode

    Marshall, A., 22/03/2011, Advances in photodiodes. Dalla Betta, G. F. (ed.). InTech, p. 447-466 20 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNChapter

  5. 2010
  6. Published

    Impact Ionization in InAs Electron Avalanche Photodiodes

    Marshall, A. R. J., David, J. P. R. & Tan, C. H., 10/2010, In: IEEE Transactions on Electron Devices. 57, 10, p. 2631-2638 8 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    High gain InAs electron-avalanche photodiodes for optical communication

    Marshall, A. R. J., Vines, P., Xie, S., David, J. P. R. & Tan, C. H., 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). New York: IEEE, p. - 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  8. 2009
  9. Published

    Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

    Marshall, A. R. J., Tan, C. H., Steer, M. J. & David, J. P. R., 1/07/2009, In: IEEE Photonics Technology Letters. 21, 13, p. 866-868 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. 2008
  11. Published

    Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

    Marshall, A. R. J., Tan, C. H., Steer, M. J. & David, J. P. R., 15/09/2008, In: Applied Physics Letters. 93, 11, p. - 3 p., 111107.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  12. Published

    Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model

    Mun, S. C. L. T., Tan, C. H., Goh, Y. L., Marshall, A. R. J. & David, J. P. R., 1/07/2008, In: Journal of Applied Physics. 104, 1, p. - 6 p., 013114.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  13. Published

    Design considerations for In0.52Al0.48As based avalanche photodiodes

    Mun, S. C. L. T., Tan, C. H., Marshall, A. R. J., Goh, Y. L., Tan, L. J. J. & David, J. P. R., 2008, 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008. . New York: IEEE, p. 331-333 3 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

  14. 2007
  15. Published

    Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H

    Marshall, A. R. J., Tan, C. H., David, J. P. R., Ng, J. S. & Hopkinson, M., 10/2007, Optical Materials in Defence Systems Technology IV. Grote, J. G., Kajzar, F. & Lindgren, M. (eds.). Bellingham, Wash.: SPIE-INT SOC OPTICAL ENGINEERING

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

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