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Professor Anthony Krier

Emeritus Professor

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  1. Published

    Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application

    Chakrabarti, P., Krier, A., Huang, X. L., Fenge, P. & Lal, R. K., 2003, PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. Kalinowski, HJ., Romero, MA. & Barbin, SE. (eds.). NEW YORK: IEEE, p. 87-92 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  2. Published

    General theory of multi-phase melt crystallization. .

    Charykov, N. A., Sherstnev, V. V. & Krier, A., 02/2002, In: Journal of Crystal Growth. 234, 4, p. 762-772 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

    Cheetham, K. J., Krier, A., Patel, I. I., Martin, F. L., Tzeng, J-S., Wu, C-J., Lin, H-H. & EPSRC Studentship for KJC (Funder), 2/03/2011, In: Journal of Physics D: Applied Physics. 44, 8, p. 085405

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

    Cheetham, K. J., Carrington, P. J., Krier, A., Patel, I. I. & Martin, F. L., 01/2012, In: Semiconductor Science and Technology. 27, 1, p. - 4 p., 015004.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

    Cheetham, K. J., Krier, A., Marko, I. P., Aldukhayel, A. & Sweeney, S. J., 3/10/2011, In: Applied Physics Letters. 99, 14, p. - 3 p., 141110.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Low bandgap GaInAsSbP pentanary thermophotovoltaic diodes

    Cheetham, K. J., Carrington, P. J., Cook, N. B. & Krier, A., 02/2011, In: Solar Energy Materials and Solar Cells. 95, 2, p. 534-537 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth.

    Chen, R., Phann, S., Sun, H. D., Zhuang, Q., Godenir, A. M. R. & Krier, A., 28/12/2009, In: Applied Physics Letters. 95, 26, p. 261905

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 mu m. .

    Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. & Sherstnev, V. V., 24/02/2003, In: Applied Physics Letters. 82, 8, p. 1149-1151 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    The effect of pressure on the radiative efficiency of InAs based light emitting diodes. .

    Choulis, S. A., Andreev, A., Merrick, M., Jin, S., Clarke, D. G., Murdin, B. N., Adams, A. R., Krier, A. & Sherstnev, V. V., 1/02/2003, In: physica status solidi (b). 235, 2, p. 312-316 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

    Cook, N. B. & Krier, A., 13/07/2009, In: Applied Physics Letters. 95, 2, p. 021110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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