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Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • K. J. Cheetham
  • A. Krier
  • I. P. Marko
  • A. Aldukhayel
  • S. J. Sweeney
Article number141110
<mark>Journal publication date</mark>3/10/2011
<mark>Journal</mark>Applied Physics Letters
Issue number14
Number of pages3
Pages (from-to)-
Publication StatusPublished
<mark>Original language</mark>English


Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.