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Professor Anthony Krier

Emeritus Professor

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  1. Published

    Optical and electrical characterisation of an p(+)-InAs0.96Sb0.04/n(0)-InAs0.96Sb0.04/n(+)-InAs photodetector for mid-infrared application

    Chakrabarti, P., Krier, A., Huang, X. L., Fenge, P. & Lal, R. K., 2003, PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II. Kalinowski, HJ., Romero, MA. & Barbin, SE. (eds.). NEW YORK: IEEE, p. 87-92 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  2. Published

    Open-circuit voltage recovery in type II GaSb/GaAs quantum ring solar cells under high concentration

    Fujita, H., Carrington, P. J., Wagener, M. C., Botha, J. R., Marshall, A. R. J., James, J., Krier, A., Lee, K-H. & Ekins-Daukes, N. J., 12/2015, In: Progress in Photovoltaics: Research and Applications. 23, 12, p. 1896-1900 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

    Montesdeoca Cardenes, D., Carrington, P. J., Marko, I. P., Wagener, M. C., Sweeney, S. J. & Krier, A., 1/12/2018, In: Solar Energy Materials and Solar Cells. 187, 1, p. 227-232 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

    Krier, A. & Huang, X. L., 7/02/2005, In: Applied Physics Letters. 86, 6, p. 061113

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

    Das, S. K., Das, T. D., Dhar, S., de la Mare, M. & Krier, A., 01/2012, In: Infrared Physics and Technology. 55, 1, p. 156-160 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

    Kolosov, O., Dinelli, F., Robson, A., Krier, A., Hayne, M., Falko, V. & Henini, M., 2015, IEEE 2015 International Interconnect Technology Conference / Materials for Advanced Metallization Conference. Grenoble, France: IEEE, p. 43-46 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  7. Published

    Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

    Arivuoli, D., Lawson, N. S., Krier, A., Attolini, G. & Pelosi, C., 16/10/2000, In: Materials Chemistry and Physics. 66, 2 - 3, p. 207-212 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

    de la Mare, M., Das, S. C., Das, T. D., Dhar, S. & Krier, A., 10/08/2011, In: Journal of Physics D: Applied Physics. 44, 31, p. - 7 p., 315102.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Molecular beam epitaxial growth of InAsN : Sb for midinfrared Optoelectronics

    Zhuang, Q., Godenir, A., Krier, A., Tsai, G. & Lin, H. H., 22/09/2008, In: Applied Physics Letters. 93, 12, p. 121903

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb for mid-infrared applications.

    Zhuang, Q. & Krier, A., 15/12/2009, In: IET Optoelectronics. 3, 6, p. 248-258 11 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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