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Professor Anthony Krier

Emeritus Professor

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  1. 2001
  2. Published

    Interface photoluminescence in type II broken-gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 15/10/2001, In: Journal of Applied Physics. 90, 8, p. 3988-3992 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Liquid phase epitaxial growth and morphology of InSb quantum dots. .

    Krier, A., Huang, X. L. & Hammiche, A., 21/03/2001, In: Journal of Physics D: Applied Physics. 34, 6, p. 874-878 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Physics and technology of mid-infrared light emitting diodes. .

    Krier, A., 15/03/2001, In: Philosophical Transactions A: Mathematical, Physical and Engineering Sciences . 359, 1780, p. 599-618 20 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    LEDs for formaldehyde detection at 3.6 mu m. .

    Krier, A. & Sherstnev, V. V., 7/02/2001, In: Journal of Physics D: Applied Physics. 34, 3, p. 428-432 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Investigation on InGaAs/InAlAs quantum cascade lasers.

    Zhang, Q. S., Liu, F. Q., Zhang, Y. Z., Wang, Z. G., Gao, H. H. & Krier, A., 2001, In: Journal of Infrared and Millimeter Waves. 20, 1, p. 41-43 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Mid-infrared lasers operating on a single quantum well at the type II heterointerface

    Moiseev, K. D., Mikhailova, M. P., Yakovlev, Y. P. & Krier, A., 2001, LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS. New York: IEEE, Vol. 2. p. 534-535 2 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  8. 2000
  9. Published

    Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy. .

    Krier, A., Sherstnev, V. V., Labadi, Z., Krier, S. E. & Gao, H. H., 21/12/2000, In: Journal of Physics D: Applied Physics. 33, 24, p. 3156-3160 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection. .

    Sherstnev, V. V., Monahov, A. M., Krier, A. & Hill, G., 11/12/2000, In: Applied Physics Letters. 77, 24, p. 3908-3910 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  11. Published

    Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy. .

    Krier, A., Huang, X. L. & Hammiche, A., 4/12/2000, In: Applied Physics Letters. 77, 23, p. 3791-3793 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  12. Published

    Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

    Arivuoli, D., Lawson, N. S., Krier, A., Attolini, G. & Pelosi, C., 16/10/2000, In: Materials Chemistry and Physics. 66, 2 - 3, p. 207-212 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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