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Research

Professor Anthony Krier

Emeritus Professor

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  1. 2007
  2. Published

    Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

    Krier, A., Stone, M. & Krier, S. E., 06/2007, In: Semiconductor Science and Technology. 22, 6, p. 624-628 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes. .

    Krier, A., Smirnov, V. M., Batty, P. J., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 21/05/2007, In: Applied Physics Letters. 90, 21, p. 211115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Strain enhancement during annealing of GaAsN alloys.

    Zhuang, Q. D., Krier, A. & Stanley, C. R., 15/05/2007, In: Journal of Applied Physics. 101, 10, p. 103536

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy. .

    Cripps, S. A., Hosea, T. J. C., Krier, A., Smirnov, V., Batty, P. J., Zhuang, Q. D., Lin, H. H., Liu, P. W. & Tsai, G., 24/04/2007, In: Applied Physics Letters. 92, 17, p. 172106

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    GaInAsPSb/GaSb heterostructures for mid-infrared light emitting diodes

    Smirnov, V. M., Batty, P. J., Jones, R., Krier, A., Vasil'ev, V. I., Gagis, G. S. & Kuchinskii, V. I., 04/2007, In: physica status solidi (a). 204, 4, p. 1047-1050 4 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  7. Published

    Physical working principles of semiconductor disk lasers. .

    Averkiev, N. S., Sherstnev, V. V., Monakhov, A. M., Grebenshikova, E. A., Kislyakova, A. Y., Yakovlev, Y. P., Krier, A. & Wright, D. A., 02/2007, In: Low Temperature Physics. 33, 2-3, p. 283-290 8 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    Mode behavior in InAs midinfrared whispering gallery lasers.

    Norris, G., Krier, A., Sherstnev, V. V., Monakhov, A. & Baranov, A., 1/01/2007, In: Applied Physics Letters. 90, 1, p. 011105

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    FDTD modelling of mid infrared disk lasers

    Pugh, J. R., Buss, I. J., Nash, G. R., AshleY, T., Krier, A., Cryan, M. J. & Rarity, J. G., 2007, ICTON 2007: Proceedings of the 9th International Conference on Transparent Optical Networks, Vol 4. Marciniak, M. (ed.). New York: IEEE, p. 208-211 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  10. Published

    Mid-infrared InAsSbP/InAsSb quantum well laser diodes - art. no. 673808

    Yin, M. & Krier, A., 2007, TECHNOLOGIES FOR OPTICAL COUNTERMEASURES IV. Titterton, DH. & Richardson, MA. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 73808-73808 9 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  11. Published

    Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918

    Smirnov, V. M., Batty, P. J., Krier, A. & Jones, R., 2007, Quantum Sensing and Nanophotonic Devices IV. Razeghi, M. & Brown, GJ. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 47918-47918 8 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  12. 2006
  13. Published

    Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. .

    Liu, P. W., Tsai, G., Lin, H. H., Krier, A., Zhuang, Q. D. & Stone, M, M., 13/11/2006, In: Applied Physics Letters. 89, 20, p. 201115

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  14. Published

    Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

    Krier, A., Stone, M., Zhuang, Q. D., Liu, P. W., Tsai, G. & Lin, H. H., 28/08/2006, In: Applied Physics Letters. 89, 9, p. 091110

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  15. Published

    Uncooled photodetectors for the 3-5 mu m spectral range based on III-V heterojunctions. .

    Krier, A. & Suleiman, W., 21/08/2006, In: Applied Physics Letters. 89, 8, p. 083512

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  16. Published

    Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

    Krier, A. & Huang, X. L., 21/01/2006, In: Journal of Physics D: Applied Physics. 39, 2, p. 255-261 7 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  17. Published

    Development of 3.7 mu m InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy - art. no. 639707

    Yin, M., Krier, A., Jones, R., Krier, S. & Campbell, D., 2006, Technologies for Optical Countermeasures III. Titterton, DH. (ed.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. 39707-39707 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  18. Published

    Mid-infrared diode lasers for free space optical communications

    Yin, M., Krier, A., Krier, S., Jones, R. & Carrington, P., 2006, Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components Architectures for Microwave Systems and Displays. Sjoqvist, LJ., Wilson, RA. & Merlet, TJ. (eds.). BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, p. U101-U106 6 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  19. 2005
  20. Published

    Semiconductor WGM lasers for the mid-IR spectral range

    Sherstnev, V. V., Monakhov, A. M., Astakhova, A. P., Kislyakova, A. Y., Yakovlev, Y. P., Averkiev, N. S., Krier, A. & Hill, G., 09/2005, In: Semiconductors. 39, 9, p. 1087-1092 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  21. Published

    Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

    Krier, A. & Huang, X. L., 7/02/2005, In: Applied Physics Letters. 86, 6, p. 061113

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  22. Published

    InAs whispering gallery mode lasers for the mid-infrared spectral range. .

    Sherstnev, V., Monakhov, A., Krier, A. & Wright, D. A., 02/2005, In: IEE Proceedings - Optoelectronics. 152, 1, p. 1-5 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  23. 2004
  24. Published

    Fundamental physics and practical realisation of mid-infrared photodetectors.

    Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X-L. & Sherstnev, V. V., 10/2004, In: Proceedings of SPIE. 5564, p. 92-104 13 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  25. Published

    Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

    Moiseev, K. D., Krier, A. & Yakovlev, Y. P., 08/2004, In: Journal of Electronic Materials. 33, 8, p. 867-872 6 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  26. Published

    Fabrication and characterization of an InAs0.96Sb0.04 photodetector for MIR applications. .

    Chakrabarti, P., Krier, A., Huang, X. L. & Fenge, P., 5/05/2004, In: IEEE Electron Device Letters. 25, 5, p. 283-285 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  27. Published

    The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes. .

    Monakhov, A., Krier, A. & Sherstnev, V. V., 03/2004, In: Semiconductor Science and Technology. 19, 3, p. 480-484 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  28. Published

    Structural modifications of InAs based materials for mid-infrared optoelectronic devices

    Nohavica, D. & Krier, A., 2004, ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Osvald, J. & Hascik, S. (eds.). New York: IEEE, p. 203-206 4 p.

    Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

  29. 2003
  30. Published

    Analysis and simulation of a mid-infrared P+-InAs0.55Sb0.15P0.30/n(0)-InAs0.89Sb0.11/N+-InAs0.55Sb0.15P0.30 double heterojunction photodetector grown by LPE. .

    Chakrabarti, P., Krier, A. & Morgan, A. F., 1/10/2003, In: IEEE Transactions on Electron Devices. 50, 10, p. 2049-2058 10 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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