Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
| Publication date | 2006 |
|---|---|
| Host publication | Technologies for Optical Countermeasures III |
| Editors | DH Titterton |
| Place of Publication | BELLINGHAM |
| Publisher | SPIE-INT SOC OPTICAL ENGINEERING |
| Pages | 39707-39707 |
| Number of pages | 6 |
| ISBN (print) | 978-0-8194-6495-8 |
| <mark>Original language</mark> | English |
| Event | Conference on Technologies for Optical Countermeasures III - Stockholm Duration: 12/09/2006 → 13/09/2006 |
| Conference | Conference on Technologies for Optical Countermeasures III |
|---|---|
| City | Stockholm |
| Period | 12/09/06 → 13/09/06 |
| Conference | Conference on Technologies for Optical Countermeasures III |
|---|---|
| City | Stockholm |
| Period | 12/09/06 → 13/09/06 |
We report on the liquid phase epitaxy (LPE) growth of an optimized double heterostructure (DH) 3-4 mu m laser and the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro- luminescence characteristics of prototype DH & QW devices. The optimized 5 epi-layer diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m at 170 K with a threshold current density as low as 118 A/cm(2) at 85 K. Coherent emission was obtained up to 210 K. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.