At present working on EPSRC research project entitled “InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications” aiming towards novel device-quality dilute nitride semiconductors to enable the development of photonic devices for the technologically important mid-infrared (3-5 µm) spectral range. I perform growth of these device structures by state of art Molecular Beam Epitaxy (MBE) techniques and ascertain their structural quality by high resolution thin film X-ray diffractometer (HRXRD) and optical properties by low temperature photoluminescence. After device processing and fabrication in the QTC class 100 clean room facility, electrical characteristics of these device structures are done by electroluminescence and conventional electrical characterizations.

For details see...

http://www.physics.lancs.ac.uk/dilute-nitrides/

http://scholar.google.co.uk/citations?sortby=pubdate&hl=en&user=yBEnvSgAAAAJ&view_op=list_works