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Dr Manoj Kesaria

Formerly at Lancaster University

  1. 2009
  2. Published

    Effect of Pb adatom flux rate on adlayer coverage for Stranski–Krastanov growth mode on Si(1 1 1)7 × 7 surface

    Kesaria, M., Kumar, M., Gupta, G. & Shivaprasad, S. M., 10/2009, In: Applied Surface Science. 256, p. 576-579 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. 2011
  4. Published

    Spontaneous formation of GaN nanostructures by molecular beam epitaxy

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 07/2011, In: Journal of Crystal Growth. 326, 1, p. 191-194 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 15/09/2011, In: Crystal Growth and Design. 11, 11, p. 4900-4903 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3

    Kesaria, M. & Shivaprasad, S. M., 4/10/2011, In: Applied Physics Letters. 99, 14, 4 p., 143105.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

    Kesaria, M., Shetty, S., Cohen, P. I. & Shivaprasad, S. M., 11/2011, In: Materials Research Bulletin. 46, 11, p. 1811-1813 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. 2012
  9. Published

    Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film

    Mitra, J., Abraham, G. J., Kesaria, M., Bahl, S., Gupta, A., Viswanadham, C. S., Kulkarni, U. D. & Dey, G. K., 01/2012, In: Materials Science Forum. 710, p. 757-761 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

    Bhasker, H. P., Dhar, S., Kesaria, M., Sain, A. & Shivaprasad, S. M., 24/09/2012, In: Applied Physics Letters. 101, 13, p. 132109-132113 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  11. Published

    Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

    Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. & Shivaprasad, S. M., 24/09/2012, In: Applied Physics Letters. 101, 13, p. 131605-131608 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  12. 2013
  13. Published

    The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on cubic Si(001) surface

    Shetty, S., Kesaria, M., Ghatak, J. & Shivaprasad, S. M., 06/2013, In: Crystal Growth and Design. 13, 6, p. 2407-2412 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  14. Published

    Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology

    Thakur, V., Kesaria, M. & Shivaprasad, S. M., 10/2013, In: Solid State Communications. 171, p. 8-13 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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