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Dr Manoj Kesaria

Formerly at Lancaster University

  1. Published

    Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy

    Bhasker, H. P., Thakur, V., Kesaria, M., Shivaprasad, S. M. & Dhar, S., 2014, In: AIP Conference Proceedings. 1583, 252.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  2. Published

    Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire

    Kesaria, M., Shetty, S., Cohen, P. I. & Shivaprasad, S. M., 11/2011, In: Materials Research Bulletin. 46, 11, p. 1811-1813 3 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  3. Published

    The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    Anyebe, E., Zhuang, Q., Kesaria, M. & Krier, A., 08/2014, In: Semiconductor Science and Technology. 29, 8, 7 p., 085010.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  4. Published

    The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on cubic Si(001) surface

    Shetty, S., Kesaria, M., Ghatak, J. & Shivaprasad, S. M., 06/2013, In: Crystal Growth and Design. 13, 6, p. 2407-2412 6 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  5. Published

    Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

    Kumar, P., Tuteja, M., Kesaria, M., Waghmare, U. V. & Shivaprasad, S. M., 24/09/2012, In: Applied Physics Letters. 101, 13, p. 131605-131608 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  6. Published

    Spontaneous formation of GaN nanostructures by molecular beam epitaxy

    Kesaria, M., Shetty, S. & Shivaprasad, S. M., 07/2011, In: Journal of Crystal Growth. 326, 1, p. 191-194 4 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  7. Published

    Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

    Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A. & Patanè, A., 6/04/2020, In: Applied Physics Letters. 116, 14, 5 p., 142108.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  8. Published

    Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Kesaria, M., De La Mare, M. & Krier, A., 2/11/2016, In: Journal of Physics D: Applied Physics. 49, 43, p. 435107 4 p., 43.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  9. Published

    Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film

    Mitra, J., Abraham, G. J., Kesaria, M., Bahl, S., Gupta, A., Viswanadham, C. S., Kulkarni, U. D. & Dey, G. K., 01/2012, In: Materials Science Forum. 710, p. 757-761 5 p.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

  10. Published

    Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode

    Di Paola, D. M., Kesaria, M., Makarovsky, O., Velichko, A. V., Eaves, L., Mori, N., Krier, A. & Patane, A., 18/08/2016, In: Scientific Reports. 6, 8 p., 32039.

    Research output: Contribution to Journal/MagazineJournal articlepeer-review

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