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Professor Manus Hayne SFHEA

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  1. Published

    Exciton confinement in strain-engineered metamorphic InAs/InxGa1-xAs quantum dots

    Khattak, S. A., Hayne, M., Huang, J., Vanacken, J., Moshchalkov, V., Seravalli, L., Trevisi, G. & Frigeri, P., 15/11/2017, In: Physical review B. 96, 19, 8 p., 195301.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  2. Published

    Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction

    Kerridge, G. C., Greally, M. G., Hayne, M., Usher, A., Plaut, A. S., Brum, J. A., Holland, M. C. & Stanley, C. R., 1999, In: Solid State Communications. 109, 4, p. 267-271 5 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  3. Published

    Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

    Kamarudin, M. A., Hayne, M., Young, R. J., Zhuang, Q. D., Ben, T. & Molina, S. I., 10/03/2011, In: Physical review B. 83, 11, 6 p., 115311 .

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  4. Published

    Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

    Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  5. Published

    Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

    Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  6. Published

    Hydrogenation of GaSb/GaAs quantum rings

    Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.

    Research output: Contribution to Journal/Magazine › Journal article

  7. Published

    GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells

    Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  8. Published

    ULTRARAM: A Low-Energy, High-Endurance, Compound-Semiconductor Memory on Silicon

    Hodgson, P., Lane, D., Carrington, P., Delli, E., Beanland, R. & Hayne, M., 30/04/2022, In: Advanced Electronic Materials. 8, 4, 9 p., 2101103.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  9. Published

    Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots

    Hayne, M., Maes, J., Moshchalkov, V. V., Manz, Y. M., Schmidt, O. G. & Eberl, K., 2/07/2001, In: Applied Physics Letters. 79, 1, p. 45-47 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

  10. Published

    Electron localization by self-assembled GaSb/GaAs quantum dots.

    Hayne, M., Bersier, S., Maes, J., Moshchalkov, V. V., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R. & Bimberg, D., 16/06/2003, In: Applied Physics Letters. 82, 24, p. 4355-4357 3 p.

    Research output: Contribution to Journal/Magazine › Journal article › peer-review

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