Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 1999 |
---|---|
<mark>Journal</mark> | Solid State Communications |
Issue number | 4 |
Volume | 109 |
Number of pages | 5 |
Pages (from-to) | 267-271 |
Publication Status | Published |
<mark>Original language</mark> | English |
We have investigated magnetically-induced charge redistribution within a delta modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional(2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si delta modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells.