Manus Hayne - Publications & Outputs - Research Portal

Professor Manus Hayne SFHEA

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Published
A detailed comparison of measured and simulated optical properties of a short-period GaAs/Al_xGa_1-xAs distributed Bragg reflector
Wilson, T., Hodgson, P., Robson, A., Jackson, C., Grew, B. & Hayne, M., 25/03/2020, In: Semiconductor Science and Technology. 35, 5, 6 p., 055003.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
A route towards practical quantum communication
Roberts, J., Young, M., Noori, Y., Smakman, E. P., Koenraad, P. M., Hayne, M. & Young, R., 10/07/2014.
Research output: Contribution to conference - Without ISBN/ISSN › Poster
Published
An elegant verification of the negative charge-state of the DX centre from mobility measurements of 2D electrons
Hayne, M., Usher, A., Harris, J. J. & Foxon, C. T., 1996, In: Surface Science. 362, 1-3, p. 574-578 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots
Qiu, F., Qiu, W., Li, Y., Wang, X., Zhang, Y., Zhou, X., Lv, Y., Sun, Y., Deng, H., Hu, S., Dai, N., Wang, C., Yang, Y., Zhuang, Q., Hayne, M. & Krier, A., 12/02/2016, In: Nanotechnology. 27, 6, 6 p., 065602.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Antimonide quantum dot nanostructures for novel photonic device applications
Krier, A., Carrington, P., Zhuang, Q., Young, R., Hayne, M., Lu, Q., James Asirvatham, J., Wagener, M., Botha, J. R., Koenraad, P. M. & Smakman, E. P., 5/11/2013, The wonder of nanotechnology: quantum optoelectronic devices and applications . SPIE
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter (peer-reviewed) › peer-review
Published
Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 08/2016, In: Journal of Materials Science. 51, 16, p. 7691-7698 8 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Binding energies of excitonic complexes in type-II quantum rings from diffusion quantum Monte Carlo calculations
Thomas, D., Hunt, R. J., Drummond, N. D. & Hayne, M., 15/03/2019, In: Physical Review B: Condensed Matter and Materials Physics. 99, 11, 6 p., 115306.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures
Hodgson, P. D., Young, R. J., Kamarudin, M. A., Carrington, P. J., Krier, A., Zhuang, Q. D., Smakman, E. P., Koenraad, P. M. & Hayne, M., 21/08/2013, In: Journal of Applied Physics. 114, 7, 7 p., 073519.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Charge confinement and uniformity of stacked InP quantum dots studied by magneto-optical spectroscopy
Maes, J., Hayne, M., Manz, Y. M., Schmidt, O. G., Eberl, K. & Moshchalkov, V. V., 03/2002, In: Physica E: Low-dimensional Systems and Nanostructures. 13, 2-4, p. 203-207 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells
Nuytten, T., Hayne, M., Bansal, B., Liu, H. Y., Hopkinson, M. & Moshchalkov, V. V., 5/07/2011, In: Physical review B. 84, 045302.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Classification and control of the origin of photoluminescence from Si nanocrystals.
Godefroo, S., Hayne, M., Jivanescu, M., Stesmans, A., Zacharias, M., Lededev, O., Van Tendeloo, G. & Moshchalkov, V. V., 2/03/2008, In: Nature Nanotechnology. 3, 3, p. 174-178 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Confinement in self-assembled InAs/InP quantum wires studied by magneto-photoluminescence
Maes, J., Hayne, M., Gonzalez, Y., Gonzalez, L., Fuster, D., Garcia, J. M. & Moshchalkov, V. V., 03/2004, In: Physica E: Low-dimensional Systems and Nanostructures. 21, 2-4, p. 261-264 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Control of complex quantum structures in droplet epitaxy
Chawner, J. M. A., Chang, Y., Hodgson, P. D., Hayne, M., Robson, A. J., Sanchez, A. M. & Zhuang, Q., 13/08/2019, In: Semiconductor Science and Technology. 34, 9, 7 p., 095011.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots
Hayne, M., Maes, J., Bersier, S., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R., Bimberg, D. & Moshchalkov, V. V., 03/2004, In: Physica E: Low-dimensional Systems and Nanostructures. 21, 2-4, p. 189-192 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Defect formation in InGaAs/AlSb/InAs memory devices
Trevisan, A., Hodgson, P., Lane, D., Hayne, M. & Koenraad, P. M., 25/05/2023, In: Journal of Vacuum Science and Technology B. 41, 4, 044001.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory
Lane, D., Hodgson, P., Potter, R. & Hayne, M., 12/05/2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, p. 1-3 3 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Dependence of quantum-dot formation on substrate orientation studied by magnetophotoluminescence
Maes, J., Hayne, M., Moshchalkov, V. V., Patane, A., Henini, M., Eaves, L. & Main, P. C., 19/08/2002, In: Applied Physics Letters. 81, 8, p. 1480-1482 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Diamond as a magnetic field calibration probe
Maes, J., Iakoubovskii, K., Hayne, M., Stesmans, A. & Moshchalkov, V. V., 7/04/2004, In: Journal of Physics D: Applied Physics. 37, 7, p. 1102-1106 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
Fernández-Delgado, N., Herrera, M., Chisholm, M. F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M. & Molina, S. I., 15/02/2017, In: Applied Surface Science. 395, p. 136-139 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Effective masses in high-mobility 2D electron gas structures
Coleridge, P. T., Hayne, M., Zawadzki, P. & Sachrajda, A. S., 20/07/1996, In: Surface Science. 362, 1-3, p. 560-563 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Efficient optical coupling to semiconductor quantum dots, using tunable microfluidically-formed solid immersion lenses
Woodhead, C., Hodgson, P., Young, M., Roberts, J., Noori, Y., Hayne, M. & Young, R., 1/07/2015.
Research output: Contribution to conference - Without ISBN/ISSN › Abstract
Published
Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation
Mamor, M., Pipeleers, B., Auret, F. D., Maes, J., Hayne, M., Moshchalkov, V. V. & Vantomme, A., 15/12/2003, In: Materials Science and Engineering: B . 105, 1-3, p. 179-183 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electron and hole confinement in stacked self-assembled InP dots of different sizes
Hayne, M., Maes, J., Manz, Y. M., Schmidt, O. G., Eberl, K. & Moshchalkov, V. V., 03/2001, In: physica status solidi (b). 224, 1, p. 31-35 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electron and hole confinement in stacked self-assembled InP quantum dots
Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 15/10/2000, In: Physical review B. 62, 15, p. 10324-10328 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electron localization by self-assembled GaSb/GaAs quantum dots.
Hayne, M., Bersier, S., Maes, J., Moshchalkov, V. V., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R. & Bimberg, D., 16/06/2003, In: Applied Physics Letters. 82, 24, p. 4355-4357 3 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electron wave-function spillover in self-assembled InAs/InP quantum wires
Maes, J., Hayne, M., Sidor, Y., Partoens, B., Peeters, F. M., Gonzalez, Y., Gonzalez, L., Fuster, D., Garcia, J. M. & Moshchalkov, V. V., 15/10/2004, In: Physical review B. 70, 15, 7 p., 155311.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots
Badcock, T. J., Hayne, M., Hopkinson, M., Jantsch, W., Liu, H. Y., Moshchalkov, V. V., Mowbray, D. J., Nabavi, E., Nuytten, T., Schaffler, F. & Steer, M. J., 10/04/2007, Physics of Semiconductors, Pts A and B. American Institute of Physics, Vol. 893. p. 951-952 2 p.
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Chapter
Published
Energy level diagram of X^- in high magnetic fields
Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 1/12/2000, Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. Alferov, ZH. & Esaki, L. (eds.). p. 252-255 4 p. (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Published
Energy levels of negatively charged excitons in high magnetic fields
Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 2000, In: Solid State Communications. 115, 8, p. 403-406 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Erratum: Electron wave-function spillover in self-assembled InAs/InP quantum wires (vol 70, art no 155311, 2004)
Fuster, D., Garcia, J. M., Gonzalez, L., Gonzalez, Y., Hayne, M., Maes, J., Moshchalkov, V. V., Partoens, B., Peeters, F. M. & Sidor, Y., 12/11/2007, In: Physical review B. 76, 1 p., 199902(E).
Research output: Contribution to Journal/Magazine › Journal article
Published
Exchange enhancement of the Landau-level separation for two-dimensional electrons in GaAs/Ga1-xAlxAs heterojunctions
Hayne, M., USHER, A., HARRIS, J. J. & FOXON, C. T., 15/10/1992, In: Physical review B. 46, 15, p. 9515-9519 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Exciton confinement in InAs/InP quantum wires and quantum wells in the presence of a magnetic field.
Sidor, Y., Partoens, B., Peeters, F. M., Maes, J., Hayne, M., Fuster, D., Gonzalez, Y., Gonzalez, L. & Moshchalkov, V. V., 19/11/2007, In: Physical review B. 76, 195320, p. 1-9 10 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Exciton confinement in strain-engineered metamorphic InAs/In_xGa_1-xAs quantum dots
Khattak, S. A., Hayne, M., Huang, J., Vanacken, J., Moshchalkov, V., Seravalli, L., Trevisi, G. & Frigeri, P., 15/11/2017, In: Physical review B. 96, 19, 8 p., 195301.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Excitonic and free-carrier recombination of a two-dimensional electron gas in high magnetic fields
Hayne, M., Jones, C. L., Bogaerts, R., Usher, A., Herlach, F., Moshchalkov, V. V. & Henini, M., 12/1998, In: Physica B: Condensed Matter. 256, p. 327-330 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Excitonic Mott transition in type-II quantum dots.
Bansal, B., Hayne, M., Geller, M., Bimberg, D. & Moshchalkov, V., 13/06/2008, In: Physical review B. 77, 4 p., 241304(R).
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Experimental observation of the negatively charged exciton stales in high magnetic fields
Vanhoucke, T., Hayne, M., Moshchalkov, V. V. & Henini, M., 12/2000, In: Nanotechnology. 11, 4, p. 281-285 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Extended excitons and compact heliumlike biexcitons in type-II quantum dots.
Bansal, B., Godefroo, S., Hayne, M., Medeiros-Ribeiro, G. & Moshchalkov, V., 18/11/2009, In: Physical review B. 80, 20, 205137.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer.
Ahmad Kamarudin, M., Hayne, M., Zhuang, Q. D., Kolosov, O., Nuytten, T., Moshchalkov, V. V. & Dinelli, F., 26/01/2010, In: Journal of Physics D: Applied Physics. 43, 6, p. 065402
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
GaSb quantum rings in GaAs/Al_xGa_1−xAs quantum wells
Hodgson, P., Hayne, M., Robson, A., Zhuang, Q. & Danos, E., 28/01/2016, In: Journal of Applied Physics. 119, 4, 7 p., 044305.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
Smakman, E. P., Garleff, J. K., Young, R. J., Hayne, M., Rambabu, P. & Koenraad, P. M., 2/04/2012, In: Applied Physics Letters. 100, 14, p. - 3 p., 142116.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs
Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U. & Bimberg, D., 2/02/2016, In: Physical review B. 93, 9 p., 085302.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy
Robson, A., Grishin, I., Young, R., Sanchez, A. M., Kolosov, O. & Hayne, M., 2013, In: ACS Applied Materials and Interfaces. 5, 8, p. 3241-3245 5 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots
Sidor, Y., Partoens, B., Peeters, F. M., Schildermans, N., Hayne, M., Moshchalkov, V. V., Rastelli, A. & Schmidt, O. G., 27/04/2006, In: Physical review B. 73, 15, 8 p., 155334.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High-field magneto-photoluminescence of semiconductor nanostructures
Hayne, M. & Bansal, B., 05/2012, In: Luminescence. 27, 3, p. 179-196 18 p.
Research output: Contribution to Journal/Magazine › Literature review › peer-review
Published
High-field spin-polarization transition in the Landau bands of quasi-2D electron gases with strong lateral modulation
Petit, F., Sfaxi, L., Lelarge, F., Cavanna, A., Hayne, M. & Etienne, B., 20/04/1997, In: EPL. 38, 3, p. 225-230 6 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
High-field Zeeman contribution to the trion binding energy
Vanhoucke, T., Hayne, M., Henini, M. & Moshchalkov, V. V., 15/01/2002, In: Physical review B. 65, 4, p. - 4 p., 041307.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hole coupling in stacked self-assembled InP quantum dots
Hayne, M., Provoost, R., Zundel, M. K., Manz, Y. M., Eberl, K. & Moshchalkov, V. V., 02/2000, In: Physica E: Low-dimensional Systems and Nanostructures. 6, 1-4, p. 436-439 4 p.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
Hodgson, P., Young, R., Ahmad Kamarudin, M., Zhuang, Q. & Hayne, M., 28/10/2013, In: Physical review B. 88, 15, 7 p., 155322.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Published
Hydrogenation of GaSb/GaAs quantum rings
Hodgson, P., Hayne, M., Ahmad Kamarudin, M., Zhuang, Q., Birindelli, S. & Capizzi, M., 28/08/2014, In: Applied Physics Letters. 105, 5 p., 081907.
Research output: Contribution to Journal/Magazine › Journal article
Published
Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 um laser applications srudied by magneto-photoluminescence.
Cornet, C., Levallois, C., Caroff, P., Folliot, H., Labbé, C., Even, J., Le Corre, A., Loualiche, S., Hayne, M. & Moshchalkov, V. V., 30/11/2005, In: Applied Physics Letters. 87, 23, p. - 3 p., 233111.
Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Professor Manus Hayne SFHEA

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