This paper presents a comprehensive review on the employment of wide bandgap (WBG) semiconductor power devices in wind energy conversion systems (WECSs). Silicon-carbide- (SiC) and gallium-nitride (GaN)-based power devices are highlighted and studied in this review, focusing on their application in the wind energy system. This is due to their premium characteristics such as the operation at high switching frequency, which can reduce the switching losses, and the capability to operate at high temperatures compared with silicon (Si)-based devices. These advantages promote the replacement of the conventional Si-based devices with the WBG semiconductor devices in the new modular converter topologies due to the persistent demand for a more-efficient power converter topology with lower losses and smaller sizes. The main objective of this paper was to provide a comprehensive overview of the WBG power devices commercially available on the market and employed in the modular converter topologies for renewable energy systems. The paper also provides a comparison between the WBG power technologies and the traditional ones based on the Si
devices. The paper starts from the conventional modular power converter topology circuits, and then, it discusses the opportunities for integrating the SiC and WBG devices in the modular power converters to improve and enhance the system’s performance.