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Harvard
Smith, J, Bashir, A
, Adamopoulos, G, Anthony, JE, Bradley, DDC, Hamilton, R, Heeney, M, McCulloch, I & Anthopoulos, TD 2010, '
Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)',
Advanced Materials, vol. 22, no. 32, pp. 3598-3602.
https://doi.org/10.1002/adma.201000195APA
Smith, J., Bashir, A.
, Adamopoulos, G., Anthony, J. E., Bradley, D. D. C., Hamilton, R., Heeney, M., McCulloch, I., & Anthopoulos, T. D. (2010).
Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1).
Advanced Materials,
22(32), 3598-3602.
https://doi.org/10.1002/adma.201000195Vancouver
Author
Bibtex
@article{7171828d001841bc9fa4e7e774056418,
title = "Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)",
abstract = "An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.",
keywords = "hybrid circuits, hybrid transistors, organic transistors , metal oxide semiconductors",
author = "Jeremy Smith and Aneeqa Bashir and George Adamopoulos and Anthony, {John E.} and Bradley, {Donal D. C.} and R. Hamilton and Martin Heeney and Iain McCulloch and Anthopoulos, {Thomas D.}",
year = "2010",
month = aug,
day = "24",
doi = "10.1002/adma.201000195",
language = "English",
volume = "22",
pages = "3598--3602",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "32",
}
RIS
TY - JOUR
T1 - Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)
AU - Smith, Jeremy
AU - Bashir, Aneeqa
AU - Adamopoulos, George
AU - Anthony, John E.
AU - Bradley, Donal D. C.
AU - Hamilton, R.
AU - Heeney, Martin
AU - McCulloch, Iain
AU - Anthopoulos, Thomas D.
PY - 2010/8/24
Y1 - 2010/8/24
N2 - An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.
AB - An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.
KW - hybrid circuits
KW - hybrid transistors
KW - organic transistors
KW - metal oxide semiconductors
U2 - 10.1002/adma.201000195
DO - 10.1002/adma.201000195
M3 - Journal article
VL - 22
SP - 3598
EP - 3602
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 32
ER -
