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An optimization procedure for MMIC large-signal amplifiers

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An optimization procedure for MMIC large-signal amplifiers. / D'Agostino, S ; Paoloni, C .

In: Microwave and Optical Technology Letters, Vol. 19, No. 6, 20.12.1998, p. 386-388.

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D'Agostino, S ; Paoloni, C . / An optimization procedure for MMIC large-signal amplifiers. In: Microwave and Optical Technology Letters. 1998 ; Vol. 19, No. 6. pp. 386-388.

Bibtex

@article{4c12edcb8638466b8897ef72d7233a32,
title = "An optimization procedure for MMIC large-signal amplifiers",
abstract = "An optimization procedure for GaAs integrated circuits to achieve both small-signal and large-signal performance is proposed. Besides the geometrical dimensions of the the circuit passive elements, the process parameters are used as optimization variables to define two separate sets of optimization variables for small-signal and large-signal optimization. A large-signal MESFET model, based on simple expressions among circuit elements and process parameters, allows an effective implementation of the proposed optimization method in commercial CAD tools. (C) 1998 John Wiley & Sons, Inc.",
author = "S D'Agostino and C Paoloni",
year = "1998",
month = dec,
day = "20",
doi = "10.1002/(SICI)1098-2760(19981220)19:6<386::AID-MOP3>3.0.CO;2-F",
language = "English",
volume = "19",
pages = "386--388",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley and Sons Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - An optimization procedure for MMIC large-signal amplifiers

AU - D'Agostino, S

AU - Paoloni, C

PY - 1998/12/20

Y1 - 1998/12/20

N2 - An optimization procedure for GaAs integrated circuits to achieve both small-signal and large-signal performance is proposed. Besides the geometrical dimensions of the the circuit passive elements, the process parameters are used as optimization variables to define two separate sets of optimization variables for small-signal and large-signal optimization. A large-signal MESFET model, based on simple expressions among circuit elements and process parameters, allows an effective implementation of the proposed optimization method in commercial CAD tools. (C) 1998 John Wiley & Sons, Inc.

AB - An optimization procedure for GaAs integrated circuits to achieve both small-signal and large-signal performance is proposed. Besides the geometrical dimensions of the the circuit passive elements, the process parameters are used as optimization variables to define two separate sets of optimization variables for small-signal and large-signal optimization. A large-signal MESFET model, based on simple expressions among circuit elements and process parameters, allows an effective implementation of the proposed optimization method in commercial CAD tools. (C) 1998 John Wiley & Sons, Inc.

U2 - 10.1002/(SICI)1098-2760(19981220)19:6<386::AID-MOP3>3.0.CO;2-F

DO - 10.1002/(SICI)1098-2760(19981220)19:6<386::AID-MOP3>3.0.CO;2-F

M3 - Journal article

VL - 19

SP - 386

EP - 388

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 6

ER -