Home > Research > Publications & Outputs > Antisites and anisotropic diffusion in GaAs and...

Research

Links

Text available via DOI:

Keywords

View graph of relations

Antisites and anisotropic diffusion in GaAs and GaSb

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Antisites and anisotropic diffusion in GaAs and GaSb. / Tahini, H. A.; Chroneos, A.; Bracht, H. et al.
In: Applied Physics Letters, Vol. 103, No. 14, 142107, 30.09.2013.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Tahini, HA, Chroneos, A, Bracht, H, Murphy, ST, Grimes, RW & Schwingenschloegl, U 2013, 'Antisites and anisotropic diffusion in GaAs and GaSb', Applied Physics Letters, vol. 103, no. 14, 142107. https://doi.org/10.1063/1.4824126

APA

Tahini, H. A., Chroneos, A., Bracht, H., Murphy, S. T., Grimes, R. W., & Schwingenschloegl, U. (2013). Antisites and anisotropic diffusion in GaAs and GaSb. Applied Physics Letters, 103(14), Article 142107. https://doi.org/10.1063/1.4824126

Vancouver

Tahini HA, Chroneos A, Bracht H, Murphy ST, Grimes RW, Schwingenschloegl U. Antisites and anisotropic diffusion in GaAs and GaSb. Applied Physics Letters. 2013 Sept 30;103(14):142107. doi: 10.1063/1.4824126

Author

Tahini, H. A. ; Chroneos, A. ; Bracht, H. et al. / Antisites and anisotropic diffusion in GaAs and GaSb. In: Applied Physics Letters. 2013 ; Vol. 103, No. 14.

Bibtex

@article{20541cf0f49c497294c8f7d56d1b8c6e,
title = "Antisites and anisotropic diffusion in GaAs and GaSb",
abstract = "The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate. (C) 2013 AIP Publishing LLC.",
keywords = "SELF-DIFFUSION, ISOTOPE HETEROSTRUCTURES, GALLIUM ANTIMONIDE, POINTS",
author = "Tahini, {H. A.} and A. Chroneos and H. Bracht and Murphy, {S. T.} and Grimes, {R. W.} and U. Schwingenschloegl",
year = "2013",
month = sep,
day = "30",
doi = "10.1063/1.4824126",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "14",

}

RIS

TY - JOUR

T1 - Antisites and anisotropic diffusion in GaAs and GaSb

AU - Tahini, H. A.

AU - Chroneos, A.

AU - Bracht, H.

AU - Murphy, S. T.

AU - Grimes, R. W.

AU - Schwingenschloegl, U.

PY - 2013/9/30

Y1 - 2013/9/30

N2 - The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate. (C) 2013 AIP Publishing LLC.

AB - The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate. (C) 2013 AIP Publishing LLC.

KW - SELF-DIFFUSION

KW - ISOTOPE HETEROSTRUCTURES

KW - GALLIUM ANTIMONIDE

KW - POINTS

U2 - 10.1063/1.4824126

DO - 10.1063/1.4824126

M3 - Journal article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142107

ER -