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Characterisation of sol-gel prepared (HfO2)(x)(SiO2)(1-x) (x=0.1, 0.2 and 0.4) by H-1, C-13, O-17 and Si-29 MAS NMR, FTIR and TGA

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Characterisation of sol-gel prepared (HfO2)(x)(SiO2)(1-x) (x=0.1, 0.2 and 0.4) by H-1, C-13, O-17 and Si-29 MAS NMR, FTIR and TGA. / O'Dell, Luke A.; Gunawidjaja, Philips N.; Holland, Mark A. et al.
In: Solid State Nuclear Magnetic Resonance, Vol. 33, No. 1-2, 01.01.2008, p. 16-24.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

O'Dell, LA, Gunawidjaja, PN, Holland, MA, Mountjoy, G, Pickup, DM, Newport, RJ & Smith, ME 2008, 'Characterisation of sol-gel prepared (HfO2)(x)(SiO2)(1-x) (x=0.1, 0.2 and 0.4) by H-1, C-13, O-17 and Si-29 MAS NMR, FTIR and TGA', Solid State Nuclear Magnetic Resonance, vol. 33, no. 1-2, pp. 16-24. https://doi.org/10.1016/j.ssnmr.2007.11.001

APA

O'Dell, L. A., Gunawidjaja, P. N., Holland, M. A., Mountjoy, G., Pickup, D. M., Newport, R. J., & Smith, M. E. (2008). Characterisation of sol-gel prepared (HfO2)(x)(SiO2)(1-x) (x=0.1, 0.2 and 0.4) by H-1, C-13, O-17 and Si-29 MAS NMR, FTIR and TGA. Solid State Nuclear Magnetic Resonance, 33(1-2), 16-24. https://doi.org/10.1016/j.ssnmr.2007.11.001

Vancouver

O'Dell LA, Gunawidjaja PN, Holland MA, Mountjoy G, Pickup DM, Newport RJ et al. Characterisation of sol-gel prepared (HfO2)(x)(SiO2)(1-x) (x=0.1, 0.2 and 0.4) by H-1, C-13, O-17 and Si-29 MAS NMR, FTIR and TGA. Solid State Nuclear Magnetic Resonance. 2008 Jan 1;33(1-2):16-24. doi: 10.1016/j.ssnmr.2007.11.001

Author

O'Dell, Luke A. ; Gunawidjaja, Philips N. ; Holland, Mark A. et al. / Characterisation of sol-gel prepared (HfO2)(x)(SiO2)(1-x) (x=0.1, 0.2 and 0.4) by H-1, C-13, O-17 and Si-29 MAS NMR, FTIR and TGA. In: Solid State Nuclear Magnetic Resonance. 2008 ; Vol. 33, No. 1-2. pp. 16-24.

Bibtex

@article{ad80bf33f3814a1b9f5805335fc3e55d,
title = "Characterisation of sol-gel prepared (HfO2)(x)(SiO2)(1-x) (x=0.1, 0.2 and 0.4) by H-1, C-13, O-17 and Si-29 MAS NMR, FTIR and TGA",
abstract = "The HfO2-SiO2 system is attracting interest as a possible new dielectric material in semiconductor devices. Knowledge of the location of hafnium within the silica network and the effect hafnium has on the structure will be central to the successful use of this material system in this application. Here, sol-gel techniques have been used to manufacture (HfO2)(x)(SiO2)(1-x) samples (x = 0.1, 0.2 and 0.4, each heat treated at 250, 500 and 750 degrees C) and these have been characterised by magic angle spinning (MAS) NMR (H-1, C-13, O-17, Si-29), Fourier transform infrared spectroscopy (FTIR) and thermogravimetric analysis. 29Si MAS NMR showed that increasing the hafnia content decreases the connectivity of the silicate network, i.e. increases the range of differently connected SiO4 (Q(n)) units with more having increased numbers of non-bridging oxygens (i.e. lower n). FTIR and O-17 MAS NMR showed unequivocally that the x = 0.4 sample phase-separated at higher temperatures, while in the x = 0.1 sample the hafnium was homogeneously mixed into the SiO2 phase without any phase separation. (C) 2007 Elsevier Inc. All rights reserved.",
keywords = "O-17 NMR, sol-gel, nanoscale phase separation, inorganic materials",
author = "O'Dell, {Luke A.} and Gunawidjaja, {Philips N.} and Holland, {Mark A.} and Gavin Mountjoy and Pickup, {Dave M.} and Newport, {Robert J.} and Smith, {Mark E.}",
year = "2008",
month = jan,
day = "1",
doi = "10.1016/j.ssnmr.2007.11.001",
language = "English",
volume = "33",
pages = "16--24",
journal = "Solid State Nuclear Magnetic Resonance",
issn = "1527-3326",
publisher = "ACADEMIC PRESS INC ELSEVIER SCIENCE",
number = "1-2",

}

RIS

TY - JOUR

T1 - Characterisation of sol-gel prepared (HfO2)(x)(SiO2)(1-x) (x=0.1, 0.2 and 0.4) by H-1, C-13, O-17 and Si-29 MAS NMR, FTIR and TGA

AU - O'Dell, Luke A.

AU - Gunawidjaja, Philips N.

AU - Holland, Mark A.

AU - Mountjoy, Gavin

AU - Pickup, Dave M.

AU - Newport, Robert J.

AU - Smith, Mark E.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - The HfO2-SiO2 system is attracting interest as a possible new dielectric material in semiconductor devices. Knowledge of the location of hafnium within the silica network and the effect hafnium has on the structure will be central to the successful use of this material system in this application. Here, sol-gel techniques have been used to manufacture (HfO2)(x)(SiO2)(1-x) samples (x = 0.1, 0.2 and 0.4, each heat treated at 250, 500 and 750 degrees C) and these have been characterised by magic angle spinning (MAS) NMR (H-1, C-13, O-17, Si-29), Fourier transform infrared spectroscopy (FTIR) and thermogravimetric analysis. 29Si MAS NMR showed that increasing the hafnia content decreases the connectivity of the silicate network, i.e. increases the range of differently connected SiO4 (Q(n)) units with more having increased numbers of non-bridging oxygens (i.e. lower n). FTIR and O-17 MAS NMR showed unequivocally that the x = 0.4 sample phase-separated at higher temperatures, while in the x = 0.1 sample the hafnium was homogeneously mixed into the SiO2 phase without any phase separation. (C) 2007 Elsevier Inc. All rights reserved.

AB - The HfO2-SiO2 system is attracting interest as a possible new dielectric material in semiconductor devices. Knowledge of the location of hafnium within the silica network and the effect hafnium has on the structure will be central to the successful use of this material system in this application. Here, sol-gel techniques have been used to manufacture (HfO2)(x)(SiO2)(1-x) samples (x = 0.1, 0.2 and 0.4, each heat treated at 250, 500 and 750 degrees C) and these have been characterised by magic angle spinning (MAS) NMR (H-1, C-13, O-17, Si-29), Fourier transform infrared spectroscopy (FTIR) and thermogravimetric analysis. 29Si MAS NMR showed that increasing the hafnia content decreases the connectivity of the silicate network, i.e. increases the range of differently connected SiO4 (Q(n)) units with more having increased numbers of non-bridging oxygens (i.e. lower n). FTIR and O-17 MAS NMR showed unequivocally that the x = 0.4 sample phase-separated at higher temperatures, while in the x = 0.1 sample the hafnium was homogeneously mixed into the SiO2 phase without any phase separation. (C) 2007 Elsevier Inc. All rights reserved.

KW - O-17 NMR, sol-gel, nanoscale phase separation, inorganic materials

U2 - 10.1016/j.ssnmr.2007.11.001

DO - 10.1016/j.ssnmr.2007.11.001

M3 - Journal article

VL - 33

SP - 16

EP - 24

JO - Solid State Nuclear Magnetic Resonance

JF - Solid State Nuclear Magnetic Resonance

SN - 1527-3326

IS - 1-2

ER -