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    Rights statement: This paper is a postprint of a paper submitted to and accepted for publication in IET Microwaves, Antennas and Propagation and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at the IET Digital Library

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Design of a high-gain silicon BJT and an E- pHEMT hybrid matrix amplifier with an optimum filter-matching technique

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Design of a high-gain silicon BJT and an E- pHEMT hybrid matrix amplifier with an optimum filter-matching technique. / Sangaran, Pragash; Narendra, Kumar; Paoloni, Claudio.
In: IET Microwaves, Antennas and Propagation, Vol. 13, No. 12, 02.10.2019, p. 2153 – 2158.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Sangaran, P, Narendra, K & Paoloni, C 2019, 'Design of a high-gain silicon BJT and an E- pHEMT hybrid matrix amplifier with an optimum filter-matching technique', IET Microwaves, Antennas and Propagation, vol. 13, no. 12, pp. 2153 – 2158. https://doi.org/10.1049/iet-map.2018.5079

APA

Vancouver

Sangaran P, Narendra K, Paoloni C. Design of a high-gain silicon BJT and an E- pHEMT hybrid matrix amplifier with an optimum filter-matching technique. IET Microwaves, Antennas and Propagation. 2019 Oct 2;13(12):2153 – 2158. Epub 2019 Jun 14. doi: 10.1049/iet-map.2018.5079

Author

Sangaran, Pragash ; Narendra, Kumar ; Paoloni, Claudio. / Design of a high-gain silicon BJT and an E- pHEMT hybrid matrix amplifier with an optimum filter-matching technique. In: IET Microwaves, Antennas and Propagation. 2019 ; Vol. 13, No. 12. pp. 2153 – 2158.

Bibtex

@article{c7c155915e444e28a17e63370c41c08f,
title = "Design of a high-gain silicon BJT and an E- pHEMT hybrid matrix amplifier with an optimum filter-matching technique",
abstract = "Software-defined radio (SDR) is an advanced wireless transmission paradigm that supports all the consumer wireless protocols such as 2G, 3G, Long-Term Evolution, Wi-Fi (2.4 and 5 GHz), Bluetooth, and Zigbee, by software rather than hardware. A typical frequency band of operation is in the range of 0.5–6 GHz. The challenge to bring an SDR system on portable devices is the availability of ultra-wide-band compact amplifiers with a high gain over a wide frequency band. A novel hybrid silicon bipolar junction transistor (BJT) and an enhancement-mode pseudomorphic-high-electron-mobility-transistor (E- pHEMT) matrix amplifier with two rows and four columns (2 × 4) of transistors are designed, realised, and tested demonstrating a 0.65–5.8 GHz frequency band to satisfy the SDR specifications. The novel optimum filter-matching technique is applied to optimise the performance and overcome the limit of the hybrid approach. The proposed matrix amplifier exhibits an average gain of 37.5 dB and an average output power of 18 dBm across the 0.65–5.8 GHz band with only 3 V supply voltage. The gain is the highest in the state of the art for the frequency range. A bandwidth of 5.15 GHz, 20.3 dBm above the 1-dB compression point at 1.35 GHz, 10–16% power added efficiency, and 1.2 W DC power consumptions are obtained.",
keywords = "matrix amplifier, SDR",
author = "Pragash Sangaran and Kumar Narendra and Claudio Paoloni",
note = "This paper is a postprint of a paper submitted to and accepted for publication in IET Microwaves, Antennas and Propagation and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at the IET Digital Library",
year = "2019",
month = oct,
day = "2",
doi = "10.1049/iet-map.2018.5079",
language = "English",
volume = "13",
pages = "2153 – 2158",
journal = "IET Microwaves, Antennas and Propagation",
issn = "1751-8733",
publisher = "Institution of Engineering and Technology",
number = "12",

}

RIS

TY - JOUR

T1 - Design of a high-gain silicon BJT and an E- pHEMT hybrid matrix amplifier with an optimum filter-matching technique

AU - Sangaran, Pragash

AU - Narendra, Kumar

AU - Paoloni, Claudio

N1 - This paper is a postprint of a paper submitted to and accepted for publication in IET Microwaves, Antennas and Propagation and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at the IET Digital Library

PY - 2019/10/2

Y1 - 2019/10/2

N2 - Software-defined radio (SDR) is an advanced wireless transmission paradigm that supports all the consumer wireless protocols such as 2G, 3G, Long-Term Evolution, Wi-Fi (2.4 and 5 GHz), Bluetooth, and Zigbee, by software rather than hardware. A typical frequency band of operation is in the range of 0.5–6 GHz. The challenge to bring an SDR system on portable devices is the availability of ultra-wide-band compact amplifiers with a high gain over a wide frequency band. A novel hybrid silicon bipolar junction transistor (BJT) and an enhancement-mode pseudomorphic-high-electron-mobility-transistor (E- pHEMT) matrix amplifier with two rows and four columns (2 × 4) of transistors are designed, realised, and tested demonstrating a 0.65–5.8 GHz frequency band to satisfy the SDR specifications. The novel optimum filter-matching technique is applied to optimise the performance and overcome the limit of the hybrid approach. The proposed matrix amplifier exhibits an average gain of 37.5 dB and an average output power of 18 dBm across the 0.65–5.8 GHz band with only 3 V supply voltage. The gain is the highest in the state of the art for the frequency range. A bandwidth of 5.15 GHz, 20.3 dBm above the 1-dB compression point at 1.35 GHz, 10–16% power added efficiency, and 1.2 W DC power consumptions are obtained.

AB - Software-defined radio (SDR) is an advanced wireless transmission paradigm that supports all the consumer wireless protocols such as 2G, 3G, Long-Term Evolution, Wi-Fi (2.4 and 5 GHz), Bluetooth, and Zigbee, by software rather than hardware. A typical frequency band of operation is in the range of 0.5–6 GHz. The challenge to bring an SDR system on portable devices is the availability of ultra-wide-band compact amplifiers with a high gain over a wide frequency band. A novel hybrid silicon bipolar junction transistor (BJT) and an enhancement-mode pseudomorphic-high-electron-mobility-transistor (E- pHEMT) matrix amplifier with two rows and four columns (2 × 4) of transistors are designed, realised, and tested demonstrating a 0.65–5.8 GHz frequency band to satisfy the SDR specifications. The novel optimum filter-matching technique is applied to optimise the performance and overcome the limit of the hybrid approach. The proposed matrix amplifier exhibits an average gain of 37.5 dB and an average output power of 18 dBm across the 0.65–5.8 GHz band with only 3 V supply voltage. The gain is the highest in the state of the art for the frequency range. A bandwidth of 5.15 GHz, 20.3 dBm above the 1-dB compression point at 1.35 GHz, 10–16% power added efficiency, and 1.2 W DC power consumptions are obtained.

KW - matrix amplifier

KW - SDR

U2 - 10.1049/iet-map.2018.5079

DO - 10.1049/iet-map.2018.5079

M3 - Journal article

VL - 13

SP - 2153

EP - 2158

JO - IET Microwaves, Antennas and Propagation

JF - IET Microwaves, Antennas and Propagation

SN - 1751-8733

IS - 12

ER -