Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Abstract
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Abstract
}
TY - CHAP
T1 - Etching of CVD Diamond Films Using Different Techniques
AU - Adamopoulos, George
AU - Peng, X.L.
AU - Clyne, T.W.
AU - Batchelder, D.N.
AU - Buckley, A.
PY - 2002
Y1 - 2002
N2 - Diamond films with a thickness ranging from 5 to 10 μm have been deposited on Si(100) substrates using hot filament CVD from a CH4-H2 mixture. These diamond films have been etched via plasmas generated from H2, O2, Ar and CF4 as well as via diffusion etching using transition metals, such as Co and Mn. It was found that CVD diamond is very resistant towards Ar and CF4 plasmas, while H2, O2 plasma are more aggressive towards diamond through chemical reaction between carbon and atomic hydrogen and oxygen. Columnar structure was formed after O2 plasma etching, while H2 plasma resulted in anisotropic diamond etching. Diamond etching via diffusion reaction with transition metals was not effective.
AB - Diamond films with a thickness ranging from 5 to 10 μm have been deposited on Si(100) substrates using hot filament CVD from a CH4-H2 mixture. These diamond films have been etched via plasmas generated from H2, O2, Ar and CF4 as well as via diffusion etching using transition metals, such as Co and Mn. It was found that CVD diamond is very resistant towards Ar and CF4 plasmas, while H2, O2 plasma are more aggressive towards diamond through chemical reaction between carbon and atomic hydrogen and oxygen. Columnar structure was formed after O2 plasma etching, while H2 plasma resulted in anisotropic diamond etching. Diamond etching via diffusion reaction with transition metals was not effective.
M3 - Abstract
SP - K30
BT - E-MRS Spring Meeting 2002 June 18 - 21, 2002 SYMPOSIUM K Thin Film Materials for Large Area Electronics
T2 - E-MRS Spring Meeting 2002
Y2 - 18 June 2002
ER -