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Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source

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Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source. / Andreani, C.; Pietropaolo, A.; Salsano, A. et al.
In: Applied Physics Letters, Vol. 92, No. 11, 114101, 28.03.2008.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Andreani, C, Pietropaolo, A, Salsano, A, Gorini, G, Tardocchi, M, Paccagnella, A, Gerardin, S, Frost, CD, Ansell, S & Platt, SP 2008, 'Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source', Applied Physics Letters, vol. 92, no. 11, 114101. https://doi.org/10.1063/1.2897309

APA

Andreani, C., Pietropaolo, A., Salsano, A., Gorini, G., Tardocchi, M., Paccagnella, A., Gerardin, S., Frost, C. D., Ansell, S., & Platt, S. P. (2008). Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source. Applied Physics Letters, 92(11), Article 114101. https://doi.org/10.1063/1.2897309

Vancouver

Andreani C, Pietropaolo A, Salsano A, Gorini G, Tardocchi M, Paccagnella A et al. Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source. Applied Physics Letters. 2008 Mar 28;92(11):114101. doi: 10.1063/1.2897309

Author

Andreani, C. ; Pietropaolo, A. ; Salsano, A. et al. / Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source. In: Applied Physics Letters. 2008 ; Vol. 92, No. 11.

Bibtex

@article{be68acbc8f964d2da4ac3c8f9f9b888b,
title = "Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source",
abstract = "The VESUVIO beam line at the ISIS spallation neutron source was set up for neutron irradiation tests in the neutron energy range above 10 MeV. The neutron flux and energy spectrum were shown, in benchmark activation measurements, to provide a neutron spectrum similar to the ambient one at sea level, but with an enhancement in intensity of a factor of 107. Such conditions are suitable for accelerated testing of electronic components, as was demonstrated here by measurements of soft error rates in recent technology field programable gate arrays.",
author = "C. Andreani and A. Pietropaolo and A. Salsano and G. Gorini and M. Tardocchi and A. Paccagnella and S. Gerardin and Frost, {C. D.} and S. Ansell and Platt, {S. P.}",
year = "2008",
month = mar,
day = "28",
doi = "10.1063/1.2897309",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "11",

}

RIS

TY - JOUR

T1 - Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source

AU - Andreani, C.

AU - Pietropaolo, A.

AU - Salsano, A.

AU - Gorini, G.

AU - Tardocchi, M.

AU - Paccagnella, A.

AU - Gerardin, S.

AU - Frost, C. D.

AU - Ansell, S.

AU - Platt, S. P.

PY - 2008/3/28

Y1 - 2008/3/28

N2 - The VESUVIO beam line at the ISIS spallation neutron source was set up for neutron irradiation tests in the neutron energy range above 10 MeV. The neutron flux and energy spectrum were shown, in benchmark activation measurements, to provide a neutron spectrum similar to the ambient one at sea level, but with an enhancement in intensity of a factor of 107. Such conditions are suitable for accelerated testing of electronic components, as was demonstrated here by measurements of soft error rates in recent technology field programable gate arrays.

AB - The VESUVIO beam line at the ISIS spallation neutron source was set up for neutron irradiation tests in the neutron energy range above 10 MeV. The neutron flux and energy spectrum were shown, in benchmark activation measurements, to provide a neutron spectrum similar to the ambient one at sea level, but with an enhancement in intensity of a factor of 107. Such conditions are suitable for accelerated testing of electronic components, as was demonstrated here by measurements of soft error rates in recent technology field programable gate arrays.

U2 - 10.1063/1.2897309

DO - 10.1063/1.2897309

M3 - Journal article

AN - SCOPUS:41049103493

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 114101

ER -