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High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures. / Thomas, Stuart R.; Adamopoulos, George; Lin, Yen-hung et al.
In: Applied Physics Letters, Vol. 105, No. 9, 092105, 01.09.2014.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Thomas, SR, Adamopoulos, G, Lin, Y, Faber, H, Sygellou, L, Stratakis, E, Pliatsikas, N, Patsalas, PA & Anthopoulos, TD 2014, 'High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures', Applied Physics Letters, vol. 105, no. 9, 092105. https://doi.org/10.1063/1.4894643

APA

Thomas, S. R., Adamopoulos, G., Lin, Y., Faber, H., Sygellou, L., Stratakis, E., Pliatsikas, N., Patsalas, P. A., & Anthopoulos, T. D. (2014). High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures. Applied Physics Letters, 105(9), Article 092105. https://doi.org/10.1063/1.4894643

Vancouver

Thomas SR, Adamopoulos G, Lin Y, Faber H, Sygellou L, Stratakis E et al. High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures. Applied Physics Letters. 2014 Sept 1;105(9):092105. doi: 10.1063/1.4894643

Author

Thomas, Stuart R. ; Adamopoulos, George ; Lin, Yen-hung et al. / High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures. In: Applied Physics Letters. 2014 ; Vol. 105, No. 9.

Bibtex

@article{f137b163c83f462ab7b6f61283a563bc,
title = "High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures",
abstract = "We report on thin-film transistors based on Ga2O3 films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga2O3 films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga2O3 films show n-type conductivity with the maximum electron mobility of ∼2 cm2/V s.",
author = "Thomas, {Stuart R.} and George Adamopoulos and Yen-hung Lin and Hendrik Faber and Labrini Sygellou and Emmanuel Stratakis and Nikos Pliatsikas and Patsalas, {Panos A.} and Anthopoulos, {Thomas D.}",
year = "2014",
month = sep,
day = "1",
doi = "10.1063/1.4894643",
language = "English",
volume = "105",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "9",

}

RIS

TY - JOUR

T1 - High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures

AU - Thomas, Stuart R.

AU - Adamopoulos, George

AU - Lin, Yen-hung

AU - Faber, Hendrik

AU - Sygellou, Labrini

AU - Stratakis, Emmanuel

AU - Pliatsikas, Nikos

AU - Patsalas, Panos A.

AU - Anthopoulos, Thomas D.

PY - 2014/9/1

Y1 - 2014/9/1

N2 - We report on thin-film transistors based on Ga2O3 films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga2O3 films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga2O3 films show n-type conductivity with the maximum electron mobility of ∼2 cm2/V s.

AB - We report on thin-film transistors based on Ga2O3 films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450 °C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700 °C) were also investigated. Both as-grown and post-deposition annealed Ga2O3 films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ∼4.9 eV. Transistors based on as-deposited Ga2O3 films show n-type conductivity with the maximum electron mobility of ∼2 cm2/V s.

U2 - 10.1063/1.4894643

DO - 10.1063/1.4894643

M3 - Journal article

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 092105

ER -