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High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions. / Hastas, N. A. ; Dimitriadis, C. A.; Panayiotatos, Y. et al.
In: Semiconductor Science and Technology, Vol. 17, No. 7, 2002, p. 662-667.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hastas, NA, Dimitriadis, CA, Panayiotatos, Y, Tassis, DH, Logothetidis, S, Papadimitriou, D, Roupakas, G & Adamopoulos, G 2002, 'High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions', Semiconductor Science and Technology, vol. 17, no. 7, pp. 662-667. https://doi.org/10.1088/0268-1242/17/7/304

APA

Hastas, N. A., Dimitriadis, C. A., Panayiotatos, Y., Tassis, D. H., Logothetidis, S., Papadimitriou, D., Roupakas, G., & Adamopoulos, G. (2002). High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions. Semiconductor Science and Technology, 17(7), 662-667. https://doi.org/10.1088/0268-1242/17/7/304

Vancouver

Hastas NA, Dimitriadis CA, Panayiotatos Y, Tassis DH, Logothetidis S, Papadimitriou D et al. High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions. Semiconductor Science and Technology. 2002;17(7):662-667. doi: 10.1088/0268-1242/17/7/304

Author

Hastas, N. A. ; Dimitriadis, C. A. ; Panayiotatos, Y. et al. / High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions. In: Semiconductor Science and Technology. 2002 ; Vol. 17, No. 7. pp. 662-667.

Bibtex

@article{1db9653a848f41488aafbc6d3aeb4311,
title = "High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions",
abstract = "The electrical conductivity of heterojunctions of amorphous carbon (a-C) films (25 and 75 nm thick) grown on silicon by magnetron sputtering has been studied as a function of the applied electric field and temperature. At low electric fields and high temperatures, the conductivity exhibits thermally activated ohmic behaviour with activation energy 0.14 eV. At high electric fields, photoconductance measurements indicate that the conductivity is primarily due to a field-activated mobility with its activation energy decreasing as the electric field increases. At very high electric fields, band-to-band tunnelling is the dominant conduction mechanism. The mobility field-activated conduction model indicates an energy distribution of trapping states consisting of two exponential distributions. The exponential distributions correspond to tail states arising from clustering of sp(2) sites and to deep states caused by isolated sp(2) sites. Low-frequency noise measurements show that thicker a-C films contain a higher concentration of the trapping states. This result was explained by an increase of the sp(2)/sp(3) bonding ratio found from the analysis of Raman spectroscopic measurements.",
keywords = "DIAMOND THIN-FILMS, ELECTRONIC-PROPERTIES, AMAN-SPECTROSCOPY, CONDUCTIVITY",
author = "Hastas, {N. A.} and Dimitriadis, {C. A.} and Y. Panayiotatos and Tassis, {D. H.} and S. Logothetidis and D. Papadimitriou and G. Roupakas and George Adamopoulos",
year = "2002",
doi = "10.1088/0268-1242/17/7/304",
language = "English",
volume = "17",
pages = "662--667",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "7",

}

RIS

TY - JOUR

T1 - High-field transport and noise properties of sputter-deposited amorphous carbon-silicon heterojunctions

AU - Hastas, N. A.

AU - Dimitriadis, C. A.

AU - Panayiotatos, Y.

AU - Tassis, D. H.

AU - Logothetidis, S.

AU - Papadimitriou, D.

AU - Roupakas, G.

AU - Adamopoulos, George

PY - 2002

Y1 - 2002

N2 - The electrical conductivity of heterojunctions of amorphous carbon (a-C) films (25 and 75 nm thick) grown on silicon by magnetron sputtering has been studied as a function of the applied electric field and temperature. At low electric fields and high temperatures, the conductivity exhibits thermally activated ohmic behaviour with activation energy 0.14 eV. At high electric fields, photoconductance measurements indicate that the conductivity is primarily due to a field-activated mobility with its activation energy decreasing as the electric field increases. At very high electric fields, band-to-band tunnelling is the dominant conduction mechanism. The mobility field-activated conduction model indicates an energy distribution of trapping states consisting of two exponential distributions. The exponential distributions correspond to tail states arising from clustering of sp(2) sites and to deep states caused by isolated sp(2) sites. Low-frequency noise measurements show that thicker a-C films contain a higher concentration of the trapping states. This result was explained by an increase of the sp(2)/sp(3) bonding ratio found from the analysis of Raman spectroscopic measurements.

AB - The electrical conductivity of heterojunctions of amorphous carbon (a-C) films (25 and 75 nm thick) grown on silicon by magnetron sputtering has been studied as a function of the applied electric field and temperature. At low electric fields and high temperatures, the conductivity exhibits thermally activated ohmic behaviour with activation energy 0.14 eV. At high electric fields, photoconductance measurements indicate that the conductivity is primarily due to a field-activated mobility with its activation energy decreasing as the electric field increases. At very high electric fields, band-to-band tunnelling is the dominant conduction mechanism. The mobility field-activated conduction model indicates an energy distribution of trapping states consisting of two exponential distributions. The exponential distributions correspond to tail states arising from clustering of sp(2) sites and to deep states caused by isolated sp(2) sites. Low-frequency noise measurements show that thicker a-C films contain a higher concentration of the trapping states. This result was explained by an increase of the sp(2)/sp(3) bonding ratio found from the analysis of Raman spectroscopic measurements.

KW - DIAMOND THIN-FILMS

KW - ELECTRONIC-PROPERTIES

KW - AMAN-SPECTROSCOPY

KW - CONDUCTIVITY

U2 - 10.1088/0268-1242/17/7/304

DO - 10.1088/0268-1242/17/7/304

M3 - Journal article

VL - 17

SP - 662

EP - 667

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

ER -