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H-Plane and E-Plane Loaded Rectangular Slow-Wave Structure for Terahertz TWT Amplifier

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H-Plane and E-Plane Loaded Rectangular Slow-Wave Structure for Terahertz TWT Amplifier. / Billa, Laxma Reddy; Muhammad, Nadeem Akram; Chen, Xuyuan.
In: IEEE Transactions on Electron Devices, Vol. 63, No. 4, 04.2016, p. 1722-1727.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Billa, LR, Muhammad, NA & Chen, X 2016, 'H-Plane and E-Plane Loaded Rectangular Slow-Wave Structure for Terahertz TWT Amplifier', IEEE Transactions on Electron Devices, vol. 63, no. 4, pp. 1722-1727. https://doi.org/10.1109/TED.2016.2527824

APA

Billa, L. R., Muhammad, N. A., & Chen, X. (2016). H-Plane and E-Plane Loaded Rectangular Slow-Wave Structure for Terahertz TWT Amplifier. IEEE Transactions on Electron Devices, 63(4), 1722-1727. https://doi.org/10.1109/TED.2016.2527824

Vancouver

Billa LR, Muhammad NA, Chen X. H-Plane and E-Plane Loaded Rectangular Slow-Wave Structure for Terahertz TWT Amplifier. IEEE Transactions on Electron Devices. 2016 Apr;63(4):1722-1727. Epub 2016 Mar 7. doi: 10.1109/TED.2016.2527824

Author

Billa, Laxma Reddy ; Muhammad, Nadeem Akram ; Chen, Xuyuan. / H-Plane and E-Plane Loaded Rectangular Slow-Wave Structure for Terahertz TWT Amplifier. In: IEEE Transactions on Electron Devices. 2016 ; Vol. 63, No. 4. pp. 1722-1727.

Bibtex

@article{d46cb3b82c134dd9be23c40d9ea05a07,
title = "H-Plane and E-Plane Loaded Rectangular Slow-Wave Structure for Terahertz TWT Amplifier",
abstract = "A novel miniaturized rectangular slow-wave structure (SWS), composed of both H-plane and E-plane corrugations, is proposed for submillimeter or terahertz vacuum electron traveling-wave tube (TWT) devices. The advantage of this SWS is to enhance the interaction impedance, therefore, resulting in higher gain and improved output power of the device. In addition, this structure geometry permits design flexibility to achieve a better dispersion behavior (linear dispersion and wider bandwidth) and easy fabrication by available microfabrication processes. Incorporating an H-plane and E-plane load in the SWS design, we achieved a higher performance TWT amplifier with the central frequency of 400 GHz. Both electromagnetic characteristics and beam-wave interaction analysis are investigated using the 3-D electromagnetic software Computer Simulation Technology studio. The simulation results show that an enhanced interaction of the SWS is obtained, and the amplifier has wide instantaneous bandwidth of 80 GHz and 19.5-dB small signal gain at 400 GHz for 17-kV beam voltage and 20-mA beam current. A saturated output power of more than 19 W is obtained from the large-signal simulations.",
author = "Billa, {Laxma Reddy} and Muhammad, {Nadeem Akram} and Xuyuan Chen",
year = "2016",
month = apr,
doi = "10.1109/TED.2016.2527824",
language = "English",
volume = "63",
pages = "1722--1727",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

RIS

TY - JOUR

T1 - H-Plane and E-Plane Loaded Rectangular Slow-Wave Structure for Terahertz TWT Amplifier

AU - Billa, Laxma Reddy

AU - Muhammad, Nadeem Akram

AU - Chen, Xuyuan

PY - 2016/4

Y1 - 2016/4

N2 - A novel miniaturized rectangular slow-wave structure (SWS), composed of both H-plane and E-plane corrugations, is proposed for submillimeter or terahertz vacuum electron traveling-wave tube (TWT) devices. The advantage of this SWS is to enhance the interaction impedance, therefore, resulting in higher gain and improved output power of the device. In addition, this structure geometry permits design flexibility to achieve a better dispersion behavior (linear dispersion and wider bandwidth) and easy fabrication by available microfabrication processes. Incorporating an H-plane and E-plane load in the SWS design, we achieved a higher performance TWT amplifier with the central frequency of 400 GHz. Both electromagnetic characteristics and beam-wave interaction analysis are investigated using the 3-D electromagnetic software Computer Simulation Technology studio. The simulation results show that an enhanced interaction of the SWS is obtained, and the amplifier has wide instantaneous bandwidth of 80 GHz and 19.5-dB small signal gain at 400 GHz for 17-kV beam voltage and 20-mA beam current. A saturated output power of more than 19 W is obtained from the large-signal simulations.

AB - A novel miniaturized rectangular slow-wave structure (SWS), composed of both H-plane and E-plane corrugations, is proposed for submillimeter or terahertz vacuum electron traveling-wave tube (TWT) devices. The advantage of this SWS is to enhance the interaction impedance, therefore, resulting in higher gain and improved output power of the device. In addition, this structure geometry permits design flexibility to achieve a better dispersion behavior (linear dispersion and wider bandwidth) and easy fabrication by available microfabrication processes. Incorporating an H-plane and E-plane load in the SWS design, we achieved a higher performance TWT amplifier with the central frequency of 400 GHz. Both electromagnetic characteristics and beam-wave interaction analysis are investigated using the 3-D electromagnetic software Computer Simulation Technology studio. The simulation results show that an enhanced interaction of the SWS is obtained, and the amplifier has wide instantaneous bandwidth of 80 GHz and 19.5-dB small signal gain at 400 GHz for 17-kV beam voltage and 20-mA beam current. A saturated output power of more than 19 W is obtained from the large-signal simulations.

U2 - 10.1109/TED.2016.2527824

DO - 10.1109/TED.2016.2527824

M3 - Journal article

VL - 63

SP - 1722

EP - 1727

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4

ER -