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Improved Design and Microfabrication of H -Plane and E -Plane Loaded Rectangular Slow-Wave Structure for THz TWT Amplifier

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Improved Design and Microfabrication of H -Plane and E -Plane Loaded Rectangular Slow-Wave Structure for THz TWT Amplifier. / Billa, Laxma Reddy; Shi, Xianbo; Muhammad, Nadeem Akram et al.
In: IEEE Transactions on Electron Devices, Vol. 64, No. 5, 05.2017, p. 2383-2389.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Billa, LR, Shi, X, Muhammad, NA & Chen, X 2017, 'Improved Design and Microfabrication of H -Plane and E -Plane Loaded Rectangular Slow-Wave Structure for THz TWT Amplifier', IEEE Transactions on Electron Devices, vol. 64, no. 5, pp. 2383-2389. https://doi.org/10.1109/TED.2017.2683399

APA

Billa, L. R., Shi, X., Muhammad, N. A., & Chen, X. (2017). Improved Design and Microfabrication of H -Plane and E -Plane Loaded Rectangular Slow-Wave Structure for THz TWT Amplifier. IEEE Transactions on Electron Devices, 64(5), 2383-2389. https://doi.org/10.1109/TED.2017.2683399

Vancouver

Billa LR, Shi X, Muhammad NA, Chen X. Improved Design and Microfabrication of H -Plane and E -Plane Loaded Rectangular Slow-Wave Structure for THz TWT Amplifier. IEEE Transactions on Electron Devices. 2017 May;64(5):2383-2389. Epub 2017 Apr 12. doi: 10.1109/TED.2017.2683399

Author

Billa, Laxma Reddy ; Shi, Xianbo ; Muhammad, Nadeem Akram et al. / Improved Design and Microfabrication of H -Plane and E -Plane Loaded Rectangular Slow-Wave Structure for THz TWT Amplifier. In: IEEE Transactions on Electron Devices. 2017 ; Vol. 64, No. 5. pp. 2383-2389.

Bibtex

@article{d2c8d82da519442bbbc13609438f70d0,
title = "Improved Design and Microfabrication of H -Plane and E -Plane Loaded Rectangular Slow-Wave Structure for THz TWT Amplifier",
abstract = "This paper reports further investigation on a recently proposed H-plane and E-plane loaded slow-wave structure (SWS) for terahertz traveling-wave tube (TWT) amplifier. An improved input-output coupler is designed to enable easy fabrication by microfabrication technology, UV-lithography, electroplating, and molding (LIGA), and deep reactive-ion etching. The coupler shows very low reflection coefficient, S11 <; -15 dB over a frequency range 360-450 GHz. To improve the beam-wave interaction and enhance the saturated output power of the TWT, the SWS with tapered design is implemented. By tuning the period, the wave is resynchronized with the beam at the end of the SWS, resulting in more than 60% increase in the saturated output power across the 80-GHz bandwidth. In addition, the sensitivity of the output power of the TWT to the fabrication tolerance of the individual geometrical parameters is also studied in detail. It is found that the output power reduces by 80% for approximately 2% variation in the synchronized beam voltage. The KMPR-based UV-LIGA technique is adopted to fabricate the H-plane and E-plane loaded SWS. The measured lateral dimensional accuracy within ~2 μm and rms roughness of metal sidewall surface less than 80 nm is obtained.",
author = "Billa, {Laxma Reddy} and Xianbo Shi and Muhammad, {Nadeem Akram} and Xuyuan Chen",
year = "2017",
month = may,
doi = "10.1109/TED.2017.2683399",
language = "English",
volume = "64",
pages = "2383--2389",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Improved Design and Microfabrication of H -Plane and E -Plane Loaded Rectangular Slow-Wave Structure for THz TWT Amplifier

AU - Billa, Laxma Reddy

AU - Shi, Xianbo

AU - Muhammad, Nadeem Akram

AU - Chen, Xuyuan

PY - 2017/5

Y1 - 2017/5

N2 - This paper reports further investigation on a recently proposed H-plane and E-plane loaded slow-wave structure (SWS) for terahertz traveling-wave tube (TWT) amplifier. An improved input-output coupler is designed to enable easy fabrication by microfabrication technology, UV-lithography, electroplating, and molding (LIGA), and deep reactive-ion etching. The coupler shows very low reflection coefficient, S11 <; -15 dB over a frequency range 360-450 GHz. To improve the beam-wave interaction and enhance the saturated output power of the TWT, the SWS with tapered design is implemented. By tuning the period, the wave is resynchronized with the beam at the end of the SWS, resulting in more than 60% increase in the saturated output power across the 80-GHz bandwidth. In addition, the sensitivity of the output power of the TWT to the fabrication tolerance of the individual geometrical parameters is also studied in detail. It is found that the output power reduces by 80% for approximately 2% variation in the synchronized beam voltage. The KMPR-based UV-LIGA technique is adopted to fabricate the H-plane and E-plane loaded SWS. The measured lateral dimensional accuracy within ~2 μm and rms roughness of metal sidewall surface less than 80 nm is obtained.

AB - This paper reports further investigation on a recently proposed H-plane and E-plane loaded slow-wave structure (SWS) for terahertz traveling-wave tube (TWT) amplifier. An improved input-output coupler is designed to enable easy fabrication by microfabrication technology, UV-lithography, electroplating, and molding (LIGA), and deep reactive-ion etching. The coupler shows very low reflection coefficient, S11 <; -15 dB over a frequency range 360-450 GHz. To improve the beam-wave interaction and enhance the saturated output power of the TWT, the SWS with tapered design is implemented. By tuning the period, the wave is resynchronized with the beam at the end of the SWS, resulting in more than 60% increase in the saturated output power across the 80-GHz bandwidth. In addition, the sensitivity of the output power of the TWT to the fabrication tolerance of the individual geometrical parameters is also studied in detail. It is found that the output power reduces by 80% for approximately 2% variation in the synchronized beam voltage. The KMPR-based UV-LIGA technique is adopted to fabricate the H-plane and E-plane loaded SWS. The measured lateral dimensional accuracy within ~2 μm and rms roughness of metal sidewall surface less than 80 nm is obtained.

U2 - 10.1109/TED.2017.2683399

DO - 10.1109/TED.2017.2683399

M3 - Journal article

VL - 64

SP - 2383

EP - 2389

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

ER -