Rights statement: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 116 (1), 2014 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/1/10.1063/1.4886635
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Influence of a Bi surfactant on Sb incorporation in InAsSb alloys
AU - Anderson, Evan M.
AU - Lundquist, Adam M.
AU - Sarney, Wendy L.
AU - Svensson, Stefan P.
AU - Carrington, Peter J.
AU - Pearson, Chris
AU - Millunchick, Joanna M.
N1 - Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 116 (1), 2014 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/1/10.1063/1.4886635
PY - 2014/7/1
Y1 - 2014/7/1
N2 - The influence of using a Bi surfactant during the growth of InAsSb on the composition was examined, and it was found that increasing Bi flux on the surface during growth inhibits the incorporation of Sb. Analysis of the data via a kinetic model of anion incorporation shows that surface Bi acts as a catalyst for InAs formation, thus inhibiting Sb incorporation.
AB - The influence of using a Bi surfactant during the growth of InAsSb on the composition was examined, and it was found that increasing Bi flux on the surface during growth inhibits the incorporation of Sb. Analysis of the data via a kinetic model of anion incorporation shows that surface Bi acts as a catalyst for InAs formation, thus inhibiting Sb incorporation.
U2 - 10.1063/1.4886635
DO - 10.1063/1.4886635
M3 - Journal article
VL - 116
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
M1 - 014901
ER -