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Kinetics analysis of interfacial electron-transfer processes in goethite suspensions systems

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Kinetics analysis of interfacial electron-transfer processes in goethite suspensions systems. / Ma, Jianzhong; Zhu, Chengzhu; Lu, Jun et al.
In: Chemosphere, Vol. 188, 01.12.2017, p. 667-676.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Ma, J, Zhu, C, Lu, J, Ouyang, B, Xie, Q, Liu, H, Peng, S & Chen, T 2017, 'Kinetics analysis of interfacial electron-transfer processes in goethite suspensions systems', Chemosphere, vol. 188, pp. 667-676. https://doi.org/10.1016/j.chemosphere.2017.09.029

APA

Vancouver

Ma J, Zhu C, Lu J, Ouyang B, Xie Q, Liu H et al. Kinetics analysis of interfacial electron-transfer processes in goethite suspensions systems. Chemosphere. 2017 Dec 1;188:667-676. Epub 2017 Sept 7. doi: 10.1016/j.chemosphere.2017.09.029

Author

Ma, Jianzhong ; Zhu, Chengzhu ; Lu, Jun et al. / Kinetics analysis of interfacial electron-transfer processes in goethite suspensions systems. In: Chemosphere. 2017 ; Vol. 188. pp. 667-676.

Bibtex

@article{1ebcb2abc5d94f0cbd73d15409450977,
title = "Kinetics analysis of interfacial electron-transfer processes in goethite suspensions systems",
abstract = " The photochemical behavior of goethite has been one of the most important topics in the field of environmental science due to it plays a significant role in the removal and transformation process of numerous pollutants. However, the interfacial electron transfer process of goethite is not clear. Using a nanosecond laser flash photolysis spectrometer, we report the transient spectroscopic observations of interfacial electron-transfer reactions in goethite dispersion under UV irradiation. Excitation of goethite generated conduction-band electron (e cb − ) and hole (h + ). The conduction band electron (e cb − ) reacted with an electron acceptor, methylviologen dichloride hydrate (MV 2+ ), forming reduced methylviologen (MV + ) with a second-order rate constant of (2.6 ± 0.3) × 10 9 L mol −1 s −1 . The concentration of MV + was strongly influenced by MV 2+ initial concentration and pH values. The flat band potential of goethite was calculated to be E fb (goethite, pH = 7) = 0.24 V (vs NHE). Oxygen did not react with conduction band electron of goethite. The present study provides a reliable method to investigate the photo-induced interfacial charge transfer of goethite. ",
keywords = "Flat band potential, Goethite, Interfacial electron-transfer process, Laser flash photolysis",
author = "Jianzhong Ma and Chengzhu Zhu and Jun Lu and Bin Ouyang and Qiaoqin Xie and Haibo Liu and Shuchuan Peng and Tianhu Chen",
year = "2017",
month = dec,
day = "1",
doi = "10.1016/j.chemosphere.2017.09.029",
language = "English",
volume = "188",
pages = "667--676",
journal = "Chemosphere",
issn = "0045-6535",
publisher = "NLM (Medline)",

}

RIS

TY - JOUR

T1 - Kinetics analysis of interfacial electron-transfer processes in goethite suspensions systems

AU - Ma, Jianzhong

AU - Zhu, Chengzhu

AU - Lu, Jun

AU - Ouyang, Bin

AU - Xie, Qiaoqin

AU - Liu, Haibo

AU - Peng, Shuchuan

AU - Chen, Tianhu

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The photochemical behavior of goethite has been one of the most important topics in the field of environmental science due to it plays a significant role in the removal and transformation process of numerous pollutants. However, the interfacial electron transfer process of goethite is not clear. Using a nanosecond laser flash photolysis spectrometer, we report the transient spectroscopic observations of interfacial electron-transfer reactions in goethite dispersion under UV irradiation. Excitation of goethite generated conduction-band electron (e cb − ) and hole (h + ). The conduction band electron (e cb − ) reacted with an electron acceptor, methylviologen dichloride hydrate (MV 2+ ), forming reduced methylviologen (MV + ) with a second-order rate constant of (2.6 ± 0.3) × 10 9 L mol −1 s −1 . The concentration of MV + was strongly influenced by MV 2+ initial concentration and pH values. The flat band potential of goethite was calculated to be E fb (goethite, pH = 7) = 0.24 V (vs NHE). Oxygen did not react with conduction band electron of goethite. The present study provides a reliable method to investigate the photo-induced interfacial charge transfer of goethite.

AB - The photochemical behavior of goethite has been one of the most important topics in the field of environmental science due to it plays a significant role in the removal and transformation process of numerous pollutants. However, the interfacial electron transfer process of goethite is not clear. Using a nanosecond laser flash photolysis spectrometer, we report the transient spectroscopic observations of interfacial electron-transfer reactions in goethite dispersion under UV irradiation. Excitation of goethite generated conduction-band electron (e cb − ) and hole (h + ). The conduction band electron (e cb − ) reacted with an electron acceptor, methylviologen dichloride hydrate (MV 2+ ), forming reduced methylviologen (MV + ) with a second-order rate constant of (2.6 ± 0.3) × 10 9 L mol −1 s −1 . The concentration of MV + was strongly influenced by MV 2+ initial concentration and pH values. The flat band potential of goethite was calculated to be E fb (goethite, pH = 7) = 0.24 V (vs NHE). Oxygen did not react with conduction band electron of goethite. The present study provides a reliable method to investigate the photo-induced interfacial charge transfer of goethite.

KW - Flat band potential

KW - Goethite

KW - Interfacial electron-transfer process

KW - Laser flash photolysis

U2 - 10.1016/j.chemosphere.2017.09.029

DO - 10.1016/j.chemosphere.2017.09.029

M3 - Journal article

C2 - 28923730

AN - SCOPUS:85029441517

VL - 188

SP - 667

EP - 676

JO - Chemosphere

JF - Chemosphere

SN - 0045-6535

ER -