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Low sheet resistivity, high transparency SnOx-based transparent conductive oxides for their applications in OLEDs

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Low sheet resistivity, high transparency SnOx-based transparent conductive oxides for their applications in OLEDs. / Afouxenidis, Dimitrios; Bin Esro, Mazran; Vourlias, G. et al.
2014. Poster session presented at EMRS 2014, Spring Meeting, Lille, France.

Research output: Contribution to conference - Without ISBN/ISSN Posterpeer-review

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Afouxenidis D, Bin Esro M, Vourlias G, Adamopoulos G. Low sheet resistivity, high transparency SnOx-based transparent conductive oxides for their applications in OLEDs. 2014. Poster session presented at EMRS 2014, Spring Meeting, Lille, France.

Author

Afouxenidis, Dimitrios ; Bin Esro, Mazran ; Vourlias, G. et al. / Low sheet resistivity, high transparency SnOx-based transparent conductive oxides for their applications in OLEDs. Poster session presented at EMRS 2014, Spring Meeting, Lille, France.

Bibtex

@conference{988284c3bcb845889d4ef969b1a30206,
title = "Low sheet resistivity, high transparency SnOx-based transparent conductive oxides for their applications in OLEDs",
abstract = "Indium-Tin-Oxide (ITO) is currently used in OLED panels for the transparent cathode and constitutes the dominant material of choice. However, indium is becoming increasingly scarce and hence an expensive resource. Also ITO itself exhibits serious technical drawbacks related to the costly deposition techniques. ITO alternatives have been investigated aiming to produce indium-reduced or indium-free oxides, conducting polymers, carbon nanotubes, graphene, nanowires and nanoparticles however they all suffer from either low optical transparency, low sheet resistivity, lower work functions than ITO, i.e. poor energetic alignment with hole transporting layer HOMO. In this work, we report the application of ambient spray pyrolysis for the deposition of highly transparent, high work function Antimony-doped Tin Oxide (ATO) thin film as OLED anodes. ATO films were studied by means of X-rays Diffraction, AFM, UV-visible absorption spectroscopy, 4-point probe, Hall Effect, Kelvin Probe and implemented in RGB OLED structures. For optimum antimony doping, the as-deposited ATO films exhibit excellent characteristics i.e. high work function (5.05 eV) wide direct band gap (4.65 eV), high transparency (90 %) in the visible spectrum, low sheet resistivity (25 Ohm/sq) and carrier mobility of 32 cm2 V-1 s-1. The antimony-doped tin oxide R,G,B, OLEDs show similar I-V and L-V characteristics to those of ITO and high external quantum efficiencies of about 12%, 0.3 % and 13% respectively.",
author = "Dimitrios Afouxenidis and {Bin Esro}, Mazran and G. Vourlias and George Adamopoulos",
year = "2014",
language = "English",
note = "EMRS 2014, Spring Meeting ; Conference date: 26-05-2014 Through 30-05-2014",

}

RIS

TY - CONF

T1 - Low sheet resistivity, high transparency SnOx-based transparent conductive oxides for their applications in OLEDs

AU - Afouxenidis, Dimitrios

AU - Bin Esro, Mazran

AU - Vourlias, G.

AU - Adamopoulos, George

PY - 2014

Y1 - 2014

N2 - Indium-Tin-Oxide (ITO) is currently used in OLED panels for the transparent cathode and constitutes the dominant material of choice. However, indium is becoming increasingly scarce and hence an expensive resource. Also ITO itself exhibits serious technical drawbacks related to the costly deposition techniques. ITO alternatives have been investigated aiming to produce indium-reduced or indium-free oxides, conducting polymers, carbon nanotubes, graphene, nanowires and nanoparticles however they all suffer from either low optical transparency, low sheet resistivity, lower work functions than ITO, i.e. poor energetic alignment with hole transporting layer HOMO. In this work, we report the application of ambient spray pyrolysis for the deposition of highly transparent, high work function Antimony-doped Tin Oxide (ATO) thin film as OLED anodes. ATO films were studied by means of X-rays Diffraction, AFM, UV-visible absorption spectroscopy, 4-point probe, Hall Effect, Kelvin Probe and implemented in RGB OLED structures. For optimum antimony doping, the as-deposited ATO films exhibit excellent characteristics i.e. high work function (5.05 eV) wide direct band gap (4.65 eV), high transparency (90 %) in the visible spectrum, low sheet resistivity (25 Ohm/sq) and carrier mobility of 32 cm2 V-1 s-1. The antimony-doped tin oxide R,G,B, OLEDs show similar I-V and L-V characteristics to those of ITO and high external quantum efficiencies of about 12%, 0.3 % and 13% respectively.

AB - Indium-Tin-Oxide (ITO) is currently used in OLED panels for the transparent cathode and constitutes the dominant material of choice. However, indium is becoming increasingly scarce and hence an expensive resource. Also ITO itself exhibits serious technical drawbacks related to the costly deposition techniques. ITO alternatives have been investigated aiming to produce indium-reduced or indium-free oxides, conducting polymers, carbon nanotubes, graphene, nanowires and nanoparticles however they all suffer from either low optical transparency, low sheet resistivity, lower work functions than ITO, i.e. poor energetic alignment with hole transporting layer HOMO. In this work, we report the application of ambient spray pyrolysis for the deposition of highly transparent, high work function Antimony-doped Tin Oxide (ATO) thin film as OLED anodes. ATO films were studied by means of X-rays Diffraction, AFM, UV-visible absorption spectroscopy, 4-point probe, Hall Effect, Kelvin Probe and implemented in RGB OLED structures. For optimum antimony doping, the as-deposited ATO films exhibit excellent characteristics i.e. high work function (5.05 eV) wide direct band gap (4.65 eV), high transparency (90 %) in the visible spectrum, low sheet resistivity (25 Ohm/sq) and carrier mobility of 32 cm2 V-1 s-1. The antimony-doped tin oxide R,G,B, OLEDs show similar I-V and L-V characteristics to those of ITO and high external quantum efficiencies of about 12%, 0.3 % and 13% respectively.

M3 - Poster

T2 - EMRS 2014, Spring Meeting

Y2 - 26 May 2014 through 30 May 2014

ER -