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Megasonic enhanced wafer bumping process to enable high density electronics interconnection

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Megasonic enhanced wafer bumping process to enable high density electronics interconnection. / Tian, Yingtao; Kaufmann, Jens; Liu, Changqing et al.
Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd. IEEE, 2008. p. 725-729.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Tian, Y, Kaufmann, J, Liu, C, Hutt, DA, Stevens, B & Desmulliez, MPY 2008, Megasonic enhanced wafer bumping process to enable high density electronics interconnection. in Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd. IEEE, pp. 725-729. https://doi.org/10.1109/ESTC.2008.4684440

APA

Tian, Y., Kaufmann, J., Liu, C., Hutt, D. A., Stevens, B., & Desmulliez, M. P. Y. (2008). Megasonic enhanced wafer bumping process to enable high density electronics interconnection. In Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd (pp. 725-729). IEEE. https://doi.org/10.1109/ESTC.2008.4684440

Vancouver

Tian Y, Kaufmann J, Liu C, Hutt DA, Stevens B, Desmulliez MPY. Megasonic enhanced wafer bumping process to enable high density electronics interconnection. In Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd. IEEE. 2008. p. 725-729 doi: 10.1109/ESTC.2008.4684440

Author

Tian, Yingtao ; Kaufmann, Jens ; Liu, Changqing et al. / Megasonic enhanced wafer bumping process to enable high density electronics interconnection. Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd. IEEE, 2008. pp. 725-729

Bibtex

@inproceedings{233e9e762dac41938ad85621e0240270,
title = "Megasonic enhanced wafer bumping process to enable high density electronics interconnection",
abstract = "The assembly of hybrid pixel detectors requires direct interconnection between the readout chip and sensor chip. In such systems, the connection pitch size may be below 50 μm, such that the packing density (i.e. I/Os) may exceed 40,000/cm2. Electroplating is a promising approach to enable low-cost, high yield and ultra-fine pitch bumping. This paper reports an ultra-fine pitch electroplating bumping process which can be enhanced by incorporating megasonic agitation. Acoustic agitation at above 1 MHz frequencies is able to significantly reduce the diffusion boundary layer of electroplating to a thickness less than 1 μm, as compared to tens of microns under conventional plating conditions. The initial experimental results presented here demonstrate an enhanced polycrystalline growth other than dendrite deposition under a very high current density through megasonic agitation deposition, thereby allowing a significant acceleration of the electrodeposition process. For the electroplating wafer bumping process, megasonic agitation can also accelerate the bump growth rate under the same current density, due to the increase of cathodic current efficiency. Also, megasonic agitation appears not to damage the photoresist pattern, which is often the case when ultrasonic agitation is used.",
author = "Yingtao Tian and Jens Kaufmann and Changqing Liu and Hutt, {David A.} and Bob Stevens and Desmulliez, {Marc P. Y.}",
year = "2008",
doi = "10.1109/ESTC.2008.4684440",
language = "English",
isbn = "9781424428137",
pages = "725--729",
booktitle = "Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd",
publisher = "IEEE",

}

RIS

TY - GEN

T1 - Megasonic enhanced wafer bumping process to enable high density electronics interconnection

AU - Tian, Yingtao

AU - Kaufmann, Jens

AU - Liu, Changqing

AU - Hutt, David A.

AU - Stevens, Bob

AU - Desmulliez, Marc P. Y.

PY - 2008

Y1 - 2008

N2 - The assembly of hybrid pixel detectors requires direct interconnection between the readout chip and sensor chip. In such systems, the connection pitch size may be below 50 μm, such that the packing density (i.e. I/Os) may exceed 40,000/cm2. Electroplating is a promising approach to enable low-cost, high yield and ultra-fine pitch bumping. This paper reports an ultra-fine pitch electroplating bumping process which can be enhanced by incorporating megasonic agitation. Acoustic agitation at above 1 MHz frequencies is able to significantly reduce the diffusion boundary layer of electroplating to a thickness less than 1 μm, as compared to tens of microns under conventional plating conditions. The initial experimental results presented here demonstrate an enhanced polycrystalline growth other than dendrite deposition under a very high current density through megasonic agitation deposition, thereby allowing a significant acceleration of the electrodeposition process. For the electroplating wafer bumping process, megasonic agitation can also accelerate the bump growth rate under the same current density, due to the increase of cathodic current efficiency. Also, megasonic agitation appears not to damage the photoresist pattern, which is often the case when ultrasonic agitation is used.

AB - The assembly of hybrid pixel detectors requires direct interconnection between the readout chip and sensor chip. In such systems, the connection pitch size may be below 50 μm, such that the packing density (i.e. I/Os) may exceed 40,000/cm2. Electroplating is a promising approach to enable low-cost, high yield and ultra-fine pitch bumping. This paper reports an ultra-fine pitch electroplating bumping process which can be enhanced by incorporating megasonic agitation. Acoustic agitation at above 1 MHz frequencies is able to significantly reduce the diffusion boundary layer of electroplating to a thickness less than 1 μm, as compared to tens of microns under conventional plating conditions. The initial experimental results presented here demonstrate an enhanced polycrystalline growth other than dendrite deposition under a very high current density through megasonic agitation deposition, thereby allowing a significant acceleration of the electrodeposition process. For the electroplating wafer bumping process, megasonic agitation can also accelerate the bump growth rate under the same current density, due to the increase of cathodic current efficiency. Also, megasonic agitation appears not to damage the photoresist pattern, which is often the case when ultrasonic agitation is used.

U2 - 10.1109/ESTC.2008.4684440

DO - 10.1109/ESTC.2008.4684440

M3 - Conference contribution/Paper

SN - 9781424428137

SP - 725

EP - 729

BT - Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd

PB - IEEE

ER -