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Method for deposition of ceramic films

Research output: Patent

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Method for deposition of ceramic films. / Bone, Adam (Inventor); Dawson, Richard (Inventor); Leah, Rob (Inventor).

Patent No.: WO2009090419 (A2) . Jul 23, 2009.

Research output: Patent

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Bone A, Dawson R, Leah R, inventors. Method for deposition of ceramic films. WO2009090419 (A2) . 2009 Jul 23.

Author

Bone, Adam (Inventor) ; Dawson, Richard (Inventor) ; Leah, Rob (Inventor). / Method for deposition of ceramic films. Patent No.: WO2009090419 (A2) . Jul 23, 2009.

Bibtex

@misc{7088681deb8d4930a4729322dfd631cb,
title = "Method for deposition of ceramic films",
abstract = "The present invention is concerned with methods for the deposition of ceramic films on ceramic or metallic surfaces, particularly the deposition of sub-micron thickness ceramic films such as films of stabilised zirconia and doped ceria such as CGO (cerium gadolinium oxide). The present invention is particularly useful in the manufacture of high and intermediate temperature SOFC operating in the 450degC to 650degC range.",
author = "Adam Bone and Richard Dawson and Rob Leah",
year = "2009",
month = jul,
day = "23",
language = "English",
type = "Patent",
note = "WO2009090419 (A2) ; C04B41/87; C04B41/89; C23C18/12; H01M8/12",

}

RIS

TY - PAT

T1 - Method for deposition of ceramic films

AU - Bone, Adam

AU - Dawson, Richard

AU - Leah, Rob

PY - 2009/7/23

Y1 - 2009/7/23

N2 - The present invention is concerned with methods for the deposition of ceramic films on ceramic or metallic surfaces, particularly the deposition of sub-micron thickness ceramic films such as films of stabilised zirconia and doped ceria such as CGO (cerium gadolinium oxide). The present invention is particularly useful in the manufacture of high and intermediate temperature SOFC operating in the 450degC to 650degC range.

AB - The present invention is concerned with methods for the deposition of ceramic films on ceramic or metallic surfaces, particularly the deposition of sub-micron thickness ceramic films such as films of stabilised zirconia and doped ceria such as CGO (cerium gadolinium oxide). The present invention is particularly useful in the manufacture of high and intermediate temperature SOFC operating in the 450degC to 650degC range.

M3 - Patent

M1 - WO2009090419 (A2)

ER -