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Novel blue-emitting KBaGdSi2O7:Eu2+ phosphor used for near-UV white-light LED

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Novel blue-emitting KBaGdSi2O7:Eu2+ phosphor used for near-UV white-light LED. / He, Qinjiang; Fu, Renli; Gao, Weijun; Zhu, Haitao; Song, Xiufeng; Su, Xinqing.

In: Journal of Materials Science: Materials in Electronics, Vol. 31, No. 4, 28.02.2020, p. 3159-3165.

Research output: Contribution to journalJournal articlepeer-review

Harvard

He, Q, Fu, R, Gao, W, Zhu, H, Song, X & Su, X 2020, 'Novel blue-emitting KBaGdSi2O7:Eu2+ phosphor used for near-UV white-light LED', Journal of Materials Science: Materials in Electronics, vol. 31, no. 4, pp. 3159-3165. https://doi.org/10.1007/s10854-020-02862-5

APA

He, Q., Fu, R., Gao, W., Zhu, H., Song, X., & Su, X. (2020). Novel blue-emitting KBaGdSi2O7:Eu2+ phosphor used for near-UV white-light LED. Journal of Materials Science: Materials in Electronics, 31(4), 3159-3165. https://doi.org/10.1007/s10854-020-02862-5

Vancouver

He Q, Fu R, Gao W, Zhu H, Song X, Su X. Novel blue-emitting KBaGdSi2O7:Eu2+ phosphor used for near-UV white-light LED. Journal of Materials Science: Materials in Electronics. 2020 Feb 28;31(4):3159-3165. https://doi.org/10.1007/s10854-020-02862-5

Author

He, Qinjiang ; Fu, Renli ; Gao, Weijun ; Zhu, Haitao ; Song, Xiufeng ; Su, Xinqing. / Novel blue-emitting KBaGdSi2O7:Eu2+ phosphor used for near-UV white-light LED. In: Journal of Materials Science: Materials in Electronics. 2020 ; Vol. 31, No. 4. pp. 3159-3165.

Bibtex

@article{db8d3f8e235c4aa18e3a0241032c314f,
title = "Novel blue-emitting KBaGdSi2O7:Eu2+ phosphor used for near-UV white-light LED",
abstract = "Novel blue-emitting KBaGdSi2O7:Eu2+ phosphors were designed and synthesized through solid-state reaction method. The structural properties, concentration, and temperature-dependent luminescence behaviors of these phosphors were investigated in detail in this paper. Studies revealed that KBaGdSi2O7:Eu2+ phosphors have an intense absorption in the broad wavelength ranging from 250 to 400 nm that is suitable for the commercial near-UV LED, and give out intense blue light peaked at 475 nm with a full-width half-maximum of 75 nm. The crystallographic information of KBaGdSi2O7 phase is revealed from XRD pattern by Rietveld refinement. Band gap is derived to be 3.93 eV through diffuse reflection spectra through Kubelka Munk function. The concentration quenching mechanism is identified as the dipole–dipole interaction. Moreover, the thermal quenching experiment was also conducted and the activation energy is calculated as 0.3069 eV, which indicates this novel KBaGdSi2O7:Eu2+ phosphor has good thermal stability. These properties exhibit its potential commercial application for near-UV white-light LEDs (w-LEDs).",
author = "Qinjiang He and Renli Fu and Weijun Gao and Haitao Zhu and Xiufeng Song and Xinqing Su",
note = "The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-020-02862-5",
year = "2020",
month = feb,
day = "28",
doi = "10.1007/s10854-020-02862-5",
language = "English",
volume = "31",
pages = "3159--3165",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "4",

}

RIS

TY - JOUR

T1 - Novel blue-emitting KBaGdSi2O7:Eu2+ phosphor used for near-UV white-light LED

AU - He, Qinjiang

AU - Fu, Renli

AU - Gao, Weijun

AU - Zhu, Haitao

AU - Song, Xiufeng

AU - Su, Xinqing

N1 - The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-020-02862-5

PY - 2020/2/28

Y1 - 2020/2/28

N2 - Novel blue-emitting KBaGdSi2O7:Eu2+ phosphors were designed and synthesized through solid-state reaction method. The structural properties, concentration, and temperature-dependent luminescence behaviors of these phosphors were investigated in detail in this paper. Studies revealed that KBaGdSi2O7:Eu2+ phosphors have an intense absorption in the broad wavelength ranging from 250 to 400 nm that is suitable for the commercial near-UV LED, and give out intense blue light peaked at 475 nm with a full-width half-maximum of 75 nm. The crystallographic information of KBaGdSi2O7 phase is revealed from XRD pattern by Rietveld refinement. Band gap is derived to be 3.93 eV through diffuse reflection spectra through Kubelka Munk function. The concentration quenching mechanism is identified as the dipole–dipole interaction. Moreover, the thermal quenching experiment was also conducted and the activation energy is calculated as 0.3069 eV, which indicates this novel KBaGdSi2O7:Eu2+ phosphor has good thermal stability. These properties exhibit its potential commercial application for near-UV white-light LEDs (w-LEDs).

AB - Novel blue-emitting KBaGdSi2O7:Eu2+ phosphors were designed and synthesized through solid-state reaction method. The structural properties, concentration, and temperature-dependent luminescence behaviors of these phosphors were investigated in detail in this paper. Studies revealed that KBaGdSi2O7:Eu2+ phosphors have an intense absorption in the broad wavelength ranging from 250 to 400 nm that is suitable for the commercial near-UV LED, and give out intense blue light peaked at 475 nm with a full-width half-maximum of 75 nm. The crystallographic information of KBaGdSi2O7 phase is revealed from XRD pattern by Rietveld refinement. Band gap is derived to be 3.93 eV through diffuse reflection spectra through Kubelka Munk function. The concentration quenching mechanism is identified as the dipole–dipole interaction. Moreover, the thermal quenching experiment was also conducted and the activation energy is calculated as 0.3069 eV, which indicates this novel KBaGdSi2O7:Eu2+ phosphor has good thermal stability. These properties exhibit its potential commercial application for near-UV white-light LEDs (w-LEDs).

U2 - 10.1007/s10854-020-02862-5

DO - 10.1007/s10854-020-02862-5

M3 - Journal article

VL - 31

SP - 3159

EP - 3165

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 4

ER -