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Novel recombination lifetime mapping technique through Kelvin probe studies

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Novel recombination lifetime mapping technique through Kelvin probe studies. / Alderman, Nicholas ; Danos, Lefteris; Grossel, Martin et al.
Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th. IEEE, 2013. p. 0209-0211.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Alderman, N, Danos, L, Grossel, M & Markvart, T 2013, Novel recombination lifetime mapping technique through Kelvin probe studies. in Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th. IEEE, pp. 0209-0211, Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, Tampa, United States, 16/06/13. https://doi.org/10.1109/PVSC.2013.6744132

APA

Alderman, N., Danos, L., Grossel, M., & Markvart, T. (2013). Novel recombination lifetime mapping technique through Kelvin probe studies. In Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th (pp. 0209-0211). IEEE. https://doi.org/10.1109/PVSC.2013.6744132

Vancouver

Alderman N, Danos L, Grossel M, Markvart T. Novel recombination lifetime mapping technique through Kelvin probe studies. In Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th. IEEE. 2013. p. 0209-0211 doi: 10.1109/PVSC.2013.6744132

Author

Alderman, Nicholas ; Danos, Lefteris ; Grossel, Martin et al. / Novel recombination lifetime mapping technique through Kelvin probe studies. Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th. IEEE, 2013. pp. 0209-0211

Bibtex

@inproceedings{7d0c86c6d2d549a6ab0b483fcd67d80d,
title = "Novel recombination lifetime mapping technique through Kelvin probe studies",
abstract = "The Kelvin probe is a very powerful and versatile tool, allowing the extraction of data such as diffusion length, surface photovoltage and impurity concentrations. This paper investigates the extraction of surface recombination velocities (and assuming a bulk lifetime, the surface recombination lifetime) from the I-V type dependence of the sample. By using an X-Y stage, the surface recombination lifetime can be imaged for entire wafers, instead of obtaining an average value of lifetime similar to that obtained from the Sinton WCT-120 lifetime tool. This is useful in determining where further improvements in the surface passivation can be obtained, by observing problem areas in the passivation layer.",
author = "Nicholas Alderman and Lefteris Danos and Martin Grossel and Tom Markvart",
year = "2013",
doi = "10.1109/PVSC.2013.6744132",
language = "English",
pages = "0209--0211",
booktitle = "Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th",
publisher = "IEEE",
note = "Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th ; Conference date: 16-06-2013 Through 21-06-2013",

}

RIS

TY - GEN

T1 - Novel recombination lifetime mapping technique through Kelvin probe studies

AU - Alderman, Nicholas

AU - Danos, Lefteris

AU - Grossel, Martin

AU - Markvart, Tom

PY - 2013

Y1 - 2013

N2 - The Kelvin probe is a very powerful and versatile tool, allowing the extraction of data such as diffusion length, surface photovoltage and impurity concentrations. This paper investigates the extraction of surface recombination velocities (and assuming a bulk lifetime, the surface recombination lifetime) from the I-V type dependence of the sample. By using an X-Y stage, the surface recombination lifetime can be imaged for entire wafers, instead of obtaining an average value of lifetime similar to that obtained from the Sinton WCT-120 lifetime tool. This is useful in determining where further improvements in the surface passivation can be obtained, by observing problem areas in the passivation layer.

AB - The Kelvin probe is a very powerful and versatile tool, allowing the extraction of data such as diffusion length, surface photovoltage and impurity concentrations. This paper investigates the extraction of surface recombination velocities (and assuming a bulk lifetime, the surface recombination lifetime) from the I-V type dependence of the sample. By using an X-Y stage, the surface recombination lifetime can be imaged for entire wafers, instead of obtaining an average value of lifetime similar to that obtained from the Sinton WCT-120 lifetime tool. This is useful in determining where further improvements in the surface passivation can be obtained, by observing problem areas in the passivation layer.

U2 - 10.1109/PVSC.2013.6744132

DO - 10.1109/PVSC.2013.6744132

M3 - Conference contribution/Paper

SP - 209

EP - 211

BT - Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

PB - IEEE

T2 - Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Y2 - 16 June 2013 through 21 June 2013

ER -