Rights statement: © Royal Society of Chemistry 2016
Accepted author manuscript, 593 KB, PDF document
Available under license: CC BY
Rights statement: © Royal Society of Chemistry 2016
Final published version, 1.29 MB, PDF document
Available under license: CC BY
Final published version
Licence: CC BY
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - On the origin and magnitude of surface stresses due to metal nanofilms
AU - Bowen, James
AU - Cheneler, David
PY - 2016/2/21
Y1 - 2016/2/21
N2 - Metallisation is a vital process for micro- and nanofabrication, allowing the controlled preparation of material surfaces with thin films of a variety of metals. The films are often subjected to further processing, including etching, patterning, chemical modification, and additional lamination. The extensive applications of metallised substrates include chemical sensors and nanoelectronics. Here, we report an experimental study of the metallisation of silicon cantilevers with nano-films of chromium and titanium. Analysis of the stress distribution throughout the cantilever showed that metallisation causes a constant stress along the length of the beam, which can be calculated from interferometric quantification of the beam curvature. The structure of the metal/silicon interface was imaged using electron microscopy in an attempt to ascertain the physical origin of the stress. A theoretical model is constructed for the stressed beam system, and it is shown that there is no single parameter that can describe the change in stress. The resultant structure after deposition varies significantly for each metal, which gives rise to a variety of stress directions and magnitudes.
AB - Metallisation is a vital process for micro- and nanofabrication, allowing the controlled preparation of material surfaces with thin films of a variety of metals. The films are often subjected to further processing, including etching, patterning, chemical modification, and additional lamination. The extensive applications of metallised substrates include chemical sensors and nanoelectronics. Here, we report an experimental study of the metallisation of silicon cantilevers with nano-films of chromium and titanium. Analysis of the stress distribution throughout the cantilever showed that metallisation causes a constant stress along the length of the beam, which can be calculated from interferometric quantification of the beam curvature. The structure of the metal/silicon interface was imaged using electron microscopy in an attempt to ascertain the physical origin of the stress. A theoretical model is constructed for the stressed beam system, and it is shown that there is no single parameter that can describe the change in stress. The resultant structure after deposition varies significantly for each metal, which gives rise to a variety of stress directions and magnitudes.
U2 - 10.1039/C5NR08789A
DO - 10.1039/C5NR08789A
M3 - Journal article
VL - 8
SP - 4245
EP - 4251
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
IS - 7
ER -