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Passivation of n-type silicon (111) surfaces by the attachment of charged molecules

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Passivation of n-type silicon (111) surfaces by the attachment of charged molecules. / Alderman, Nicholas; Danos, Lefteris; Grossel, Martin et al.
2012 38th IEEE Photovoltaic Specialists Conference (PVSC). New York: IEEE, 2012. p. 992-995.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Alderman, N, Danos, L, Grossel, M & Markvart, T 2012, Passivation of n-type silicon (111) surfaces by the attachment of charged molecules. in 2012 38th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, New York, pp. 992-995, 38th IEEE Photovoltaic Specialists Conference (PVSC), Austin, 3/06/12. https://doi.org/10.1109/PVSC.2012.6317769

APA

Alderman, N., Danos, L., Grossel, M., & Markvart, T. (2012). Passivation of n-type silicon (111) surfaces by the attachment of charged molecules. In 2012 38th IEEE Photovoltaic Specialists Conference (PVSC) (pp. 992-995). IEEE. https://doi.org/10.1109/PVSC.2012.6317769

Vancouver

Alderman N, Danos L, Grossel M, Markvart T. Passivation of n-type silicon (111) surfaces by the attachment of charged molecules. In 2012 38th IEEE Photovoltaic Specialists Conference (PVSC). New York: IEEE. 2012. p. 992-995 doi: 10.1109/PVSC.2012.6317769

Author

Alderman, Nicholas ; Danos, Lefteris ; Grossel, Martin et al. / Passivation of n-type silicon (111) surfaces by the attachment of charged molecules. 2012 38th IEEE Photovoltaic Specialists Conference (PVSC). New York : IEEE, 2012. pp. 992-995

Bibtex

@inproceedings{5179ed35656f461db90643678d709041,
title = "Passivation of n-type silicon (111) surfaces by the attachment of charged molecules",
abstract = "With the drive for ever more efficient photovoltaics, the passivating layer becomes of greater importance. Currently, two main passivating mechanisms have been widely investigated; removal of surface states by organic layers and charging of surfaces to invert the surface bands. Our paper aims to increase the knowledge of this area by combining the removal of surface states with charging, in an attempt to build ever more efficient passivation layers. It was found that upon immersion in base, the recombination lifetime significantly improved from around 8 mu s to over 30 mu s, due to a negative monolayer surface charge. As the charge is further from the silicon surface, both the recombination lifetime and surface photovoltage (SPV) decrease. This in turn indicates a reduction in the surface electron concentration. Once the surface charge is neutralized, both the recombination lifetime and SPV return to their starting value.",
keywords = "charge carrier lifetime, surface functionalization, silicon, crystalline materials",
author = "Nicholas Alderman and Lefteris Danos and Martin Grossel and Tom Markvart",
year = "2012",
doi = "10.1109/PVSC.2012.6317769",
language = "English",
isbn = "978-1-4673-0066-7",
pages = "992--995",
booktitle = "2012 38th IEEE Photovoltaic Specialists Conference (PVSC)",
publisher = "IEEE",
note = "38th IEEE Photovoltaic Specialists Conference (PVSC) ; Conference date: 03-06-2012 Through 08-06-2012",

}

RIS

TY - GEN

T1 - Passivation of n-type silicon (111) surfaces by the attachment of charged molecules

AU - Alderman, Nicholas

AU - Danos, Lefteris

AU - Grossel, Martin

AU - Markvart, Tom

PY - 2012

Y1 - 2012

N2 - With the drive for ever more efficient photovoltaics, the passivating layer becomes of greater importance. Currently, two main passivating mechanisms have been widely investigated; removal of surface states by organic layers and charging of surfaces to invert the surface bands. Our paper aims to increase the knowledge of this area by combining the removal of surface states with charging, in an attempt to build ever more efficient passivation layers. It was found that upon immersion in base, the recombination lifetime significantly improved from around 8 mu s to over 30 mu s, due to a negative monolayer surface charge. As the charge is further from the silicon surface, both the recombination lifetime and surface photovoltage (SPV) decrease. This in turn indicates a reduction in the surface electron concentration. Once the surface charge is neutralized, both the recombination lifetime and SPV return to their starting value.

AB - With the drive for ever more efficient photovoltaics, the passivating layer becomes of greater importance. Currently, two main passivating mechanisms have been widely investigated; removal of surface states by organic layers and charging of surfaces to invert the surface bands. Our paper aims to increase the knowledge of this area by combining the removal of surface states with charging, in an attempt to build ever more efficient passivation layers. It was found that upon immersion in base, the recombination lifetime significantly improved from around 8 mu s to over 30 mu s, due to a negative monolayer surface charge. As the charge is further from the silicon surface, both the recombination lifetime and surface photovoltage (SPV) decrease. This in turn indicates a reduction in the surface electron concentration. Once the surface charge is neutralized, both the recombination lifetime and SPV return to their starting value.

KW - charge carrier lifetime

KW - surface functionalization

KW - silicon

KW - crystalline materials

U2 - 10.1109/PVSC.2012.6317769

DO - 10.1109/PVSC.2012.6317769

M3 - Conference contribution/Paper

SN - 978-1-4673-0066-7

SP - 992

EP - 995

BT - 2012 38th IEEE Photovoltaic Specialists Conference (PVSC)

PB - IEEE

CY - New York

T2 - 38th IEEE Photovoltaic Specialists Conference (PVSC)

Y2 - 3 June 2012 through 8 June 2012

ER -