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Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles

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Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles. / BOXALL, C ; KELSALL, G H .
In: Journal of Electroanalytical Chemistry, Vol. 328, No. 1-2, 01.07.1992, p. 75-97.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

BOXALL, C & KELSALL, GH 1992, 'Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles', Journal of Electroanalytical Chemistry, vol. 328, no. 1-2, pp. 75-97. https://doi.org/10.1016/0022-0728(92)80171-Y

APA

BOXALL, C., & KELSALL, G. H. (1992). Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles. Journal of Electroanalytical Chemistry, 328(1-2), 75-97. https://doi.org/10.1016/0022-0728(92)80171-Y

Vancouver

BOXALL C, KELSALL GH. Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles. Journal of Electroanalytical Chemistry. 1992 Jul 1;328(1-2):75-97. doi: 10.1016/0022-0728(92)80171-Y

Author

BOXALL, C ; KELSALL, G H . / Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles. In: Journal of Electroanalytical Chemistry. 1992 ; Vol. 328, No. 1-2. pp. 75-97.

Bibtex

@article{9f4d0e6bb483408da64702f0484630bd,
title = "Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles",
abstract = "Some semiconductor particles, such as SnO2 (band gap approximately 3.5 eV), when irradiated with photons of energy greater than the band gap, exhibit changes in electrophoretic mobility. We report experimental data and a second-order kinetic model for the time dependence of photo-induced changes in electrophoretic mobilities of aqueous dispersions of SnO2 particles. All experiments were conducted in the absence of hole and electron scavengers. Comparisons are made between the behaviour, rate constants and quantum yields for surface charge generation found for colloidal SnO2 and those reported previously for TiO2.",
author = "C BOXALL and KELSALL, {G H}",
year = "1992",
month = jul,
day = "1",
doi = "10.1016/0022-0728(92)80171-Y",
language = "English",
volume = "328",
pages = "75--97",
journal = "Journal of Electroanalytical Chemistry",
issn = "0022-0728",
number = "1-2",

}

RIS

TY - JOUR

T1 - Photoelectrophoresis of colloidal semiconductors part III. Transient experiments on SnO2 particles

AU - BOXALL, C

AU - KELSALL, G H

PY - 1992/7/1

Y1 - 1992/7/1

N2 - Some semiconductor particles, such as SnO2 (band gap approximately 3.5 eV), when irradiated with photons of energy greater than the band gap, exhibit changes in electrophoretic mobility. We report experimental data and a second-order kinetic model for the time dependence of photo-induced changes in electrophoretic mobilities of aqueous dispersions of SnO2 particles. All experiments were conducted in the absence of hole and electron scavengers. Comparisons are made between the behaviour, rate constants and quantum yields for surface charge generation found for colloidal SnO2 and those reported previously for TiO2.

AB - Some semiconductor particles, such as SnO2 (band gap approximately 3.5 eV), when irradiated with photons of energy greater than the band gap, exhibit changes in electrophoretic mobility. We report experimental data and a second-order kinetic model for the time dependence of photo-induced changes in electrophoretic mobilities of aqueous dispersions of SnO2 particles. All experiments were conducted in the absence of hole and electron scavengers. Comparisons are made between the behaviour, rate constants and quantum yields for surface charge generation found for colloidal SnO2 and those reported previously for TiO2.

U2 - 10.1016/0022-0728(92)80171-Y

DO - 10.1016/0022-0728(92)80171-Y

M3 - Journal article

VL - 328

SP - 75

EP - 97

JO - Journal of Electroanalytical Chemistry

JF - Journal of Electroanalytical Chemistry

SN - 0022-0728

IS - 1-2

ER -