Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Photonic crystal-structures for THz vacuum electron devices
AU - Letizia, Rosa
AU - Mineo, Mauro
AU - Paoloni, Claudio
PY - 2015/1
Y1 - 2015/1
N2 - The technology of photonic crystals (PhCs) is investigated here to improve the performance of THz vacuum electron devices. Compared with conventional metallic waveguides, the PhC arrangement alleviates typical issues in THz vacuum electron tubes, i.e. difficult vacuum pumping process and assembling, and improves the input/output coupling. A slow-wave structure (SWS) based on a corrugated waveguide assisted by PhC lateral walls and the efficient design of a PhC coupler for sheet-beam interaction devices are demonstrated. Based on the proposed technology, a backward-wave oscillator (BWO) is designed in this paper. Cold parameters of the novel PhC SWS as well as 3-D particle-in-cell simulations of the overall BWO are investigated, obtaining more than 70-mW-peak output power at 0.650 THz for beam voltage of 11 kV and beam current of 6 mA.
AB - The technology of photonic crystals (PhCs) is investigated here to improve the performance of THz vacuum electron devices. Compared with conventional metallic waveguides, the PhC arrangement alleviates typical issues in THz vacuum electron tubes, i.e. difficult vacuum pumping process and assembling, and improves the input/output coupling. A slow-wave structure (SWS) based on a corrugated waveguide assisted by PhC lateral walls and the efficient design of a PhC coupler for sheet-beam interaction devices are demonstrated. Based on the proposed technology, a backward-wave oscillator (BWO) is designed in this paper. Cold parameters of the novel PhC SWS as well as 3-D particle-in-cell simulations of the overall BWO are investigated, obtaining more than 70-mW-peak output power at 0.650 THz for beam voltage of 11 kV and beam current of 6 mA.
U2 - 10.1109/TED.2014.2366639
DO - 10.1109/TED.2014.2366639
M3 - Journal article
VL - 62
SP - 178
EP - 183
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 1
ER -