Research output: Contribution to conference - Without ISBN/ISSN › Speech
Research output: Contribution to conference - Without ISBN/ISSN › Speech
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TY - CONF
T1 - Structure and properties of solution processed hafnium oxide gate dielectrics for their applications in high mobility ZnO based thin film transistors
AU - Bin Esro, Mazran
AU - Afouxenidis, Dimitrios
AU - Vourlias, G.
AU - Adamopoulos, George
PY - 2014
Y1 - 2014
N2 - In recent years a wide variety of soluble precursors have been investigated as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. The ever increasing demand for high performance thin film transistors based on metal oxide channels has given a boost to the development of alternatives to SiO2 gate dielectrics with desirable characteristics in terms of thermal stability, band offset, interface quality and ability to control the FET’s gate threshold voltage. Among these, ZrO2, HfO2, Y2O3 and Al2O3 are the most studied dielectrics and are widely considered to be excellent candidates because of their high dielectric constants, good thermal stability and large band gaps. This work reports on the structure and properties of spray pyrolysis-grown HfO2 thin films and their implementation in ZnO-based TFTs. The HfO2 films were found to be of monoclinic crystal structure with a band gap of 5.7 eV, dielectric constant as high as 19, very low leakage currents and dielectric breakdown in excess of 2.7 MV/cm. The related ZnO based TFTs exhibit excellent electron transport characteristics with negligible hysteresis, operating voltages in the range between 5-6 V, high electron mobility on the order of 40 cm2 V−1 s−1 and high current on/off ratio of about 10^7.
AB - In recent years a wide variety of soluble precursors have been investigated as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. The ever increasing demand for high performance thin film transistors based on metal oxide channels has given a boost to the development of alternatives to SiO2 gate dielectrics with desirable characteristics in terms of thermal stability, band offset, interface quality and ability to control the FET’s gate threshold voltage. Among these, ZrO2, HfO2, Y2O3 and Al2O3 are the most studied dielectrics and are widely considered to be excellent candidates because of their high dielectric constants, good thermal stability and large band gaps. This work reports on the structure and properties of spray pyrolysis-grown HfO2 thin films and their implementation in ZnO-based TFTs. The HfO2 films were found to be of monoclinic crystal structure with a band gap of 5.7 eV, dielectric constant as high as 19, very low leakage currents and dielectric breakdown in excess of 2.7 MV/cm. The related ZnO based TFTs exhibit excellent electron transport characteristics with negligible hysteresis, operating voltages in the range between 5-6 V, high electron mobility on the order of 40 cm2 V−1 s−1 and high current on/off ratio of about 10^7.
M3 - Speech
T2 - EMRS 2014, Spring Meeting
Y2 - 26 May 2014 through 30 May 2014
ER -