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The effect of silicon on the nanoprecipitation of cementite

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The effect of silicon on the nanoprecipitation of cementite. / Kim, B.; Celada, C.; San Martín, D. et al.
In: Acta Materialia, Vol. 61, No. 18, 10.2013, p. 6983-6992.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kim, B, Celada, C, San Martín, D, Sourmail, T & Rivera-Díaz-Del-Castillo, PEJ 2013, 'The effect of silicon on the nanoprecipitation of cementite', Acta Materialia, vol. 61, no. 18, pp. 6983-6992. https://doi.org/10.1016/j.actamat.2013.08.012

APA

Kim, B., Celada, C., San Martín, D., Sourmail, T., & Rivera-Díaz-Del-Castillo, P. E. J. (2013). The effect of silicon on the nanoprecipitation of cementite. Acta Materialia, 61(18), 6983-6992. https://doi.org/10.1016/j.actamat.2013.08.012

Vancouver

Kim B, Celada C, San Martín D, Sourmail T, Rivera-Díaz-Del-Castillo PEJ. The effect of silicon on the nanoprecipitation of cementite. Acta Materialia. 2013 Oct;61(18):6983-6992. doi: 10.1016/j.actamat.2013.08.012

Author

Kim, B. ; Celada, C. ; San Martín, D. et al. / The effect of silicon on the nanoprecipitation of cementite. In: Acta Materialia. 2013 ; Vol. 61, No. 18. pp. 6983-6992.

Bibtex

@article{cd9ce509680f4f4a99c86fcdfdef7622,
title = "The effect of silicon on the nanoprecipitation of cementite",
abstract = "The current work presents a comprehensive study that aims at understanding the role of silicon on θ precipitation, as well as on the ε → θ carbide transition in tempered martensite. Cementite nucleation was modelled under paraequilibrium conditions in order to ensure the presence of silicon in the carbide, where both thermodynamic and misfit strain energies were calculated to evaluate the overall free energy change. The growth stage was investigated using in situ synchrotron radiation; three alloys containing 1.4-2.3 wt.% silicon contents have been studied. Silicon appears to play a significant role in carbide growth. It was observed throughout tempering that cementite precipitation was slower in the higher silicon content alloy. Literature reports that cementite growth is accompanied by silicon partitioning, where the silicon content inside the carbide decreases as tempering progresses. Therefore it appears that the limiting factor of the growth kinetics is the rate at which silicon is rejected from the carbide; the silicon piles up at the carbide-matrix interface, acting as a barrier for further growth.",
keywords = "Carbides, Phase transformation, Precipitation kinetics, Synchrotron radiation, Tempered martensite",
author = "B. Kim and C. Celada and {San Mart{\'i}n}, D. and T. Sourmail and Rivera-D{\'i}az-Del-Castillo, {P. E.J.}",
year = "2013",
month = oct,
doi = "10.1016/j.actamat.2013.08.012",
language = "English",
volume = "61",
pages = "6983--6992",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "PERGAMON-ELSEVIER SCIENCE LTD",
number = "18",

}

RIS

TY - JOUR

T1 - The effect of silicon on the nanoprecipitation of cementite

AU - Kim, B.

AU - Celada, C.

AU - San Martín, D.

AU - Sourmail, T.

AU - Rivera-Díaz-Del-Castillo, P. E.J.

PY - 2013/10

Y1 - 2013/10

N2 - The current work presents a comprehensive study that aims at understanding the role of silicon on θ precipitation, as well as on the ε → θ carbide transition in tempered martensite. Cementite nucleation was modelled under paraequilibrium conditions in order to ensure the presence of silicon in the carbide, where both thermodynamic and misfit strain energies were calculated to evaluate the overall free energy change. The growth stage was investigated using in situ synchrotron radiation; three alloys containing 1.4-2.3 wt.% silicon contents have been studied. Silicon appears to play a significant role in carbide growth. It was observed throughout tempering that cementite precipitation was slower in the higher silicon content alloy. Literature reports that cementite growth is accompanied by silicon partitioning, where the silicon content inside the carbide decreases as tempering progresses. Therefore it appears that the limiting factor of the growth kinetics is the rate at which silicon is rejected from the carbide; the silicon piles up at the carbide-matrix interface, acting as a barrier for further growth.

AB - The current work presents a comprehensive study that aims at understanding the role of silicon on θ precipitation, as well as on the ε → θ carbide transition in tempered martensite. Cementite nucleation was modelled under paraequilibrium conditions in order to ensure the presence of silicon in the carbide, where both thermodynamic and misfit strain energies were calculated to evaluate the overall free energy change. The growth stage was investigated using in situ synchrotron radiation; three alloys containing 1.4-2.3 wt.% silicon contents have been studied. Silicon appears to play a significant role in carbide growth. It was observed throughout tempering that cementite precipitation was slower in the higher silicon content alloy. Literature reports that cementite growth is accompanied by silicon partitioning, where the silicon content inside the carbide decreases as tempering progresses. Therefore it appears that the limiting factor of the growth kinetics is the rate at which silicon is rejected from the carbide; the silicon piles up at the carbide-matrix interface, acting as a barrier for further growth.

KW - Carbides

KW - Phase transformation

KW - Precipitation kinetics

KW - Synchrotron radiation

KW - Tempered martensite

U2 - 10.1016/j.actamat.2013.08.012

DO - 10.1016/j.actamat.2013.08.012

M3 - Journal article

AN - SCOPUS:84884290754

VL - 61

SP - 6983

EP - 6992

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

IS - 18

ER -