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The mechanical behaviour of silicon diaphragms for micromachined capacitive pressure sensor

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The mechanical behaviour of silicon diaphragms for micromachined capacitive pressure sensor. / Ren, Juan; Cheneler, David; Ward, Mike.
In: Advances in Science and Technology, Vol. 54, 2008, p. 422-427.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Ren J, Cheneler D, Ward M. The mechanical behaviour of silicon diaphragms for micromachined capacitive pressure sensor. Advances in Science and Technology. 2008;54:422-427. doi: 10.4028/www.scientific.net/AST.54.422

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Ren, Juan ; Cheneler, David ; Ward, Mike. / The mechanical behaviour of silicon diaphragms for micromachined capacitive pressure sensor. In: Advances in Science and Technology. 2008 ; Vol. 54. pp. 422-427.

Bibtex

@article{4f48a07064534537b2f810f64fec18c4,
title = "The mechanical behaviour of silicon diaphragms for micromachined capacitive pressure sensor",
abstract = "Single crystal silicon diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. When designing such a sensor it is usual to assume that the silicon is an isotropic material and the average elastic constants are used. However, the mechanical properties of single crystal silicon are orthotropic, and this has an important effect on the mechanical behaviour of silicon diaphragms under pressure. In this work, the deflections of orthotropic silicon circular diaphragms which are orientated against the (100) and the (110) planes are presented. It is found that by assuming silicon is isotropic material, the maximum stress is underestimated by 9.4% for (110) orientated silicon diaphragms, while the maximum stress is underestimated by 8% for (100) orientated silicon diaphragms. Therefore, when a silicon diaphragm is used in a MEMS sensor, the orthotropic properties should be taken into account for accuracy. Finally, the performance of a capacitive sensor is predicted by using finite element method.",
author = "Juan Ren and David Cheneler and Mike Ward",
year = "2008",
doi = "10.4028/www.scientific.net/AST.54.422",
language = "English",
volume = "54",
pages = "422--427",
journal = "Advances in Science and Technology",
issn = "1662-0356",
publisher = "Trans Tech Publications Inc.",

}

RIS

TY - JOUR

T1 - The mechanical behaviour of silicon diaphragms for micromachined capacitive pressure sensor

AU - Ren, Juan

AU - Cheneler, David

AU - Ward, Mike

PY - 2008

Y1 - 2008

N2 - Single crystal silicon diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. When designing such a sensor it is usual to assume that the silicon is an isotropic material and the average elastic constants are used. However, the mechanical properties of single crystal silicon are orthotropic, and this has an important effect on the mechanical behaviour of silicon diaphragms under pressure. In this work, the deflections of orthotropic silicon circular diaphragms which are orientated against the (100) and the (110) planes are presented. It is found that by assuming silicon is isotropic material, the maximum stress is underestimated by 9.4% for (110) orientated silicon diaphragms, while the maximum stress is underestimated by 8% for (100) orientated silicon diaphragms. Therefore, when a silicon diaphragm is used in a MEMS sensor, the orthotropic properties should be taken into account for accuracy. Finally, the performance of a capacitive sensor is predicted by using finite element method.

AB - Single crystal silicon diaphragms are widely used as pressure sensitive elements in micromachined pressure sensors. When designing such a sensor it is usual to assume that the silicon is an isotropic material and the average elastic constants are used. However, the mechanical properties of single crystal silicon are orthotropic, and this has an important effect on the mechanical behaviour of silicon diaphragms under pressure. In this work, the deflections of orthotropic silicon circular diaphragms which are orientated against the (100) and the (110) planes are presented. It is found that by assuming silicon is isotropic material, the maximum stress is underestimated by 9.4% for (110) orientated silicon diaphragms, while the maximum stress is underestimated by 8% for (100) orientated silicon diaphragms. Therefore, when a silicon diaphragm is used in a MEMS sensor, the orthotropic properties should be taken into account for accuracy. Finally, the performance of a capacitive sensor is predicted by using finite element method.

U2 - 10.4028/www.scientific.net/AST.54.422

DO - 10.4028/www.scientific.net/AST.54.422

M3 - Journal article

VL - 54

SP - 422

EP - 427

JO - Advances in Science and Technology

JF - Advances in Science and Technology

SN - 1662-0356

ER -