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Time dependent quantum simulations of two-qubit gates based on donor states in silicon

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Time dependent quantum simulations of two-qubit gates based on donor states in silicon. / Kerridge, A.; Savory, S.; Harker, A. H. et al.
In: Journal of Physics: Condensed Matter, Vol. 18, No. 21, 31.05.2006, p. S767-S776.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kerridge, A, Savory, S, Harker, AH & Stoneham, AM 2006, 'Time dependent quantum simulations of two-qubit gates based on donor states in silicon', Journal of Physics: Condensed Matter, vol. 18, no. 21, pp. S767-S776. https://doi.org/10.1088/0953-8984/18/21/S04

APA

Kerridge, A., Savory, S., Harker, A. H., & Stoneham, A. M. (2006). Time dependent quantum simulations of two-qubit gates based on donor states in silicon. Journal of Physics: Condensed Matter, 18(21), S767-S776. https://doi.org/10.1088/0953-8984/18/21/S04

Vancouver

Kerridge A, Savory S, Harker AH, Stoneham AM. Time dependent quantum simulations of two-qubit gates based on donor states in silicon. Journal of Physics: Condensed Matter. 2006 May 31;18(21):S767-S776. doi: 10.1088/0953-8984/18/21/S04

Author

Kerridge, A. ; Savory, S. ; Harker, A. H. et al. / Time dependent quantum simulations of two-qubit gates based on donor states in silicon. In: Journal of Physics: Condensed Matter. 2006 ; Vol. 18, No. 21. pp. S767-S776.

Bibtex

@article{c60542056e47407bbdcbfc9e68609746,
title = "Time dependent quantum simulations of two-qubit gates based on donor states in silicon",
abstract = "Many quantum gate proposals make physical assumptions to ease analysis. Here we explicitly consider the effect of these assumptions for a particular two-qubit gate proposal, a cube-root-of-unity gate, in which the two qubits are donors in a semiconductor coupled via an intermediate 'control' spin. Our approach considers directly the electronic structures of the qubit and control impurity systems. We find that such gates are highly sensitive to environmental factors overlooked in analytically soluble models, but that there are regimes in which simplifying assumptions are valid and lead to high fidelity gates.",
keywords = "SELF-CONSISTENT CALCULATIONS, SHALLOW DEFECTS, SEMICONDUCTORS, COMPUTATION",
author = "A. Kerridge and S. Savory and Harker, {A. H.} and Stoneham, {A. M.}",
year = "2006",
month = may,
day = "31",
doi = "10.1088/0953-8984/18/21/S04",
language = "English",
volume = "18",
pages = "S767--S776",
journal = "Journal of Physics: Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd",
number = "21",

}

RIS

TY - JOUR

T1 - Time dependent quantum simulations of two-qubit gates based on donor states in silicon

AU - Kerridge, A.

AU - Savory, S.

AU - Harker, A. H.

AU - Stoneham, A. M.

PY - 2006/5/31

Y1 - 2006/5/31

N2 - Many quantum gate proposals make physical assumptions to ease analysis. Here we explicitly consider the effect of these assumptions for a particular two-qubit gate proposal, a cube-root-of-unity gate, in which the two qubits are donors in a semiconductor coupled via an intermediate 'control' spin. Our approach considers directly the electronic structures of the qubit and control impurity systems. We find that such gates are highly sensitive to environmental factors overlooked in analytically soluble models, but that there are regimes in which simplifying assumptions are valid and lead to high fidelity gates.

AB - Many quantum gate proposals make physical assumptions to ease analysis. Here we explicitly consider the effect of these assumptions for a particular two-qubit gate proposal, a cube-root-of-unity gate, in which the two qubits are donors in a semiconductor coupled via an intermediate 'control' spin. Our approach considers directly the electronic structures of the qubit and control impurity systems. We find that such gates are highly sensitive to environmental factors overlooked in analytically soluble models, but that there are regimes in which simplifying assumptions are valid and lead to high fidelity gates.

KW - SELF-CONSISTENT CALCULATIONS

KW - SHALLOW DEFECTS

KW - SEMICONDUCTORS

KW - COMPUTATION

U2 - 10.1088/0953-8984/18/21/S04

DO - 10.1088/0953-8984/18/21/S04

M3 - Journal article

VL - 18

SP - S767-S776

JO - Journal of Physics: Condensed Matter

JF - Journal of Physics: Condensed Matter

SN - 0953-8984

IS - 21

ER -